Low‐Temperature Epitaxial Growth of Vertical In₂O₃ Nanowires on A‐Plane Sapphire with Hexagonal Cross‐Section

Abstract

Epitaxial growth of vertical In2O3 (111) nanowires with hexagonal cross‐section on a‐plane sapphire is reported. The figure showing the vertical wires is viewed at 45° from the substrate normal. These wires taper gradually towards the tops and they start to bend near the tips. Because of the low‐temperature growth, the wires possess a new hexagonal symmetry and a shortest photoluminescence wavelength among those that have been reported for In2O3 nanowires.

Growth and photoluminescence properties of vertically aligned SnO2 nanowires

“…Although still challenging, procedures for achieving horizontal alignment of NWs are somewhat less restrictive since they are not limited to the direct growth of horizontally aligned NS [1,2] but can also be aligned using liquid suspensions of presynthesized NWs as well [3,4]. However, methods for obtaining vertically aligned semiconductor oxide NS require epitaxial growth, and in fact, vertically aligned NS of Ga 2 O 3 [5], InAs [6], In 2 O 3 [7,8], ZnGa 2 O 4 [9] and ZnO [10,11] have been successfully synthesized in this way. Currently, ZnO NWs have attracted a significant amount of attention due to the relative simplicity of their synthesis under a variety of conditions [12][13][14][15] and due to the wide array of potential applications (e.g., sensing [16], piezoelectricity [17] and field emission [18,19]).…”

In2O3-ZnO heterostructure development in electrical and photoluminescence properties of In2O3 1-D nanostructures

“…22 It is important to note that for avoiding fatigue in paper study, some substantial and vital verifi- cation are explained in Ref. 22. This will also be evident from the X-ray analysis presented below.…”

“…It is interesting to note that the bending of the tips was initiated by the growth in other non-(111) crystal faces but majority of the entire nanowire was still a single crystal. 22 It is important to note that for avoiding fatigue in paper study, some substantial and vital verifi- cation are explained in Ref. 22.…”

Growth mechanism and optical properties of In2O3 nanorods synthesized on ZnO/GaAs (111) substrate

“…1(c 0 )), formed just before the nanoparticle end. The existence of nanoparticles on top of the nanorods is the typical characteristic of VLS growth with the assistance of metal catalyst [5,8,9]. In the VLS growth method [10], a liquid phase is formed initially due to the formation of a eutectic phase or the presence of a low-melting-point phase in an alloy system, which consists of the substrate or the vapor phase constituent.…”

“…Bourlange et al [4] reported the growth of high-quality In 2 O 3 thin films on Y-stabilized ZrO 2 (0 0 1) substrates by molecular beam epitaxy (MBE), and they also suggested the fundamental bandgap of In 2 O 3 to be 2.67 eV, much smaller than the widely quoted value of 3.75 eV. In order to synthesise In 2 O 3 nanostructures, extrinsic metal catalyst, e.g., Au, was employed to realize the vaporliquid-solid (VLS) growth mechanism in the carbothermal reduction method [1,5], as well as in the vapor transport and condensation method [6]. The usage of such an extrinsic catalytic metal is generally not desired in semiconductors since it may act as impurities in the product.…”