Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer

Chuang, Chiashain; Liang, C.-T.; Kim, Gil‐Ho; Elmquist, Randolph E.; Yang, Yue; Hsieh, Ya‐Ping; Patel, Dinesh K.; Watanabe, Kenji; Aoki, Nobuyuki

doi:10.1016/j.carbon.2018.04.067

Cited by 13 publications

(16 citation statements)

References 27 publications

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“…Interestingly, the observed PMR becomes strongest at around T = 110 K and persists up to T = 300 K (Figure 4b), indicating that its physical origin is classical transport. In our case, the PMR is believed to be due to density inhomogeneity in our ultralow-density monolayer graphene, since the magnetoresistivity ratio decreases with increasing temperature, consistent with the classical Parish and Littlewood model [26,42,43]. The observed NMR-PMR crossover can be attributed to a transition from quantum transport to classical transport with increasing temperature [41].…”

Section: Resultssupporting

confidence: 76%

“…Interestingly, at room temperature, almost an identical magnetoresistivity ratio is observed on both the hole and electron sides up to 9 T, indicating that the observed large MR is an intrinsic property of an ultralow-density monolayer graphene, regardless of whether it is n -type or p -type. Our experimental results may open the door for future graphene-based CMOS technology on SiC with hexagonal boron nitride as a top dielectric spacer [43].…”

Section: Discussionmentioning

confidence: 99%

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Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

et al. 2019

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Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-power devices, LEDs, atomically thin electronics, and high-frequency devices, all of which can be prepared on the same SiC substrate. In this paper, we concentrate on detailed measurements on ultralow-density p-type monolayer epitaxial graphene, which has yet to be extensively studied. The measured resistivity ρxx shows insulating behavior in the sense that ρxx decreases with increasing temperature T over a wide range of T (1.5 K ≤ T ≤ 300 K). The crossover from negative magnetoresistivity (MR) to positive magnetoresistivity at T = 40 K in the low-field regime is ascribed to a transition from low-T quantum transport to high-T classical transport. For T ≥ 120 K, the measured positive MR ratio [ρxx(B) − ρxx(B = 0)]/ρxx(B = 0) at B = 2 T decreases with increasing T, but the positive MR persists up to room temperature. Our experimental results suggest that the large MR ratio (~100% at B = 9 T) is an intrinsic property of ultralow-charge-density graphene, regardless of the carrier type. This effect may find applications in magnetic sensors and magnetoresistance devices.

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Section: Resultssupporting

confidence: 76%

Section: Discussionmentioning

confidence: 99%

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

et al. 2019

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“…For example, six‐layer graphene on hexagonal boron nitride (BN) has been reported to show large room‐temperature MR of ≈2000% at 9 T. [ 24 ] However, the precise control of the layer number in multilayer graphene produced by the mass production techniques, such as roll‐to‐roll (R2R) or batch‐to‐batch (B2B) methods, remains challenging. [ 25 ] Moreover, as previously reported, [ 12–24 ] the MR of graphene will rapidly decay to below 200% at a higher carrier density of 10 12 cm −2 , which means unintentional doping will lead to the loss of MR sensitivity. The fast batch production of single‐layer graphene films, on the other hand, raises the prospect of fabricating a robust graphene magnetic sensor based on a single‐layer.…”

Section: Figurementioning

confidence: 66%

“…[ 17 ] However, the MR of single‐layer graphene has yielded limited success thus far at room temperature, typically ranging between 60% and 775% at 9 T (Table S1, Supporting Information). [ 12–23 ] The multilayer graphene can usually exhibit a large MR due to its interlayer effect. For example, six‐layer graphene on hexagonal boron nitride (BN) has been reported to show large room‐temperature MR of ≈2000% at 9 T. [ 24 ] However, the precise control of the layer number in multilayer graphene produced by the mass production techniques, such as roll‐to‐roll (R2R) or batch‐to‐batch (B2B) methods, remains challenging.…”

Section: Figurementioning

confidence: 99%

“…The crossover from the quadratic to linear MR behavior is the hallmark of the classical disorder‐induced MR. [ 38 ] Remarkably, the MR of the terraced single‐layer graphene at the CNP is found to be as high as 5000% at 9 T, which is one order of magnitude higher than that reported on previous single‐layer graphene devices at the same conditions (Table S1, Supporting Information). [ 12–24 ]…”

Section: Figurementioning

confidence: 99%

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Room‐Temperature Colossal Magnetoresistance in Terraced Single‐Layer Graphene

et al. 2020

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Disorder‐induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in 2D materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single‐layer regime. Here, a room‐temperature colossal MR of up to 5000% at 9 T is reported in terraced single‐layer graphene. By laminating single‐layer graphene on a terraced substrate, such as TiO2‐terminated SrTiO3, a universal one order of magnitude enhancement in the MR compared to conventional single‐layer graphene devices is demonstrated. Strikingly, a colossal MR of >1000% is also achieved in the terraced graphene even at a high carrier density of ≈1012 cm−2. Systematic studies of the MR of single‐layer graphene on various oxide‐ and non‐oxide‐based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. The results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.

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Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

Chuang

Mineharu

Morikura

et al. 2019

Carbon

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Large, non-saturating magnetoresistance in single layer chemical vapor deposition graphene with an h-BN capping layer

Cited by 13 publications

References 27 publications

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

Room‐Temperature Colossal Magnetoresistance in Terraced Single‐Layer Graphene

Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

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