Quantized magnetotransport is observed in 5.6 × 5.6 mm2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of
Rxy=h2e2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point (n ≈ 1010 cm−2), where mobility of 18760 cm2/V is measured over an area of 10 mm2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.
The tunability of topological surface states and controllable opening of the Dirac gap are of great importance to the application of topological materials. In topological crystalline insulators (TCIs), crystal symmetry and topology of electronic bands intertwine to create topological surface states and thus the Dirac gap can be modulated by symmetry breaking structural changes of lattice. By transport measurement on heterostructures composed of p-type topological crystalline insulator SnTe and n-type conventional semiconductor PbTe, here we show a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) induced by the Dirac Fermions at the PbTe/SnTe interface. In contrast, PbTe/SnTe samples grown at elevated temperature exhibit a cubic-to-rhombohedral structural phase transition of SnTe lattice below 100 K and weak antilocalization effect. Such distinctive magneto-resistance behavior is attributed to the broken mirror symmetry and gapping of topological surface states. Our work provides a promising application for future magneto-electronics and spintronics based on TCI heterostructures.
Topological insulators (TIs), a class of quantum materials with time reversal symmetry protected gapless Dirac-surface states, have attracted intensive research interests due to their exotic electronic properties. Topological crystalline insulators (TCIs), whose gapless surface states are protected by the crystal symmetry, have recently been proposed and experimentally verified as a new class of TIs. With high surface-to-volume ratio, nanoscale TI and TCI materials such as nanowires and nanoribbons can have significantly enhanced contribution from surface states in carrier transport and are thus ideally suited for the fundamental studies of topologically protected surface state transport and nanodevice fabrication. This article will review the synthesis and transport device measurements of TIs and TCIs nanostructures.
We report carrier density measurements and electron-electron
(e-e) interactions in monolayer epitaxial
graphene grown on SiC. The temperature (T)-independent carrier
density determined from the Shubnikov-de Haas (SdH) oscillations clearly
demonstrates that the observed logarithmic temperature dependence of Hall slope
in our system must be due to
e-e interactions. Since the electron
density determined from conventional SdH measurements does not depend on
e-e interactions based on Kohn's
theorem, SdH experiments appear to be more reliable compared with the classical
Hall effect when one studies the T dependence of the carrier
density in the low T regime. On the other hand, the logarithmic
T dependence of the Hall slope
δRxy/δB can be
used to probe e-e interactions even when the
conventional conductivity method is not applicable due to strong electron-phonon
scattering.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.