Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

Chuang, Chiashain; Mineharu, Masaaki; Morikura, Masahiro; Liu, Chieh-Wen; Wu, B.-Y.; Kim, Gil‐Ho; Watanabe, Kenji; Taniguchi, Takashi; Liang, Chi‐Te; Aoki, Nobuyuki

doi:10.1016/j.carbon.2019.07.057

Cited by 8 publications

(6 citation statements)

References 56 publications

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“…Commercial high crystalline quality and large-area SL/multilayer (ML) h-BN was grown on copper (Cu) foils by chemical vapor deposition (CVD) methods to perform only for wet transfer methods [37][38][39][40]. The homogeneous and high-purity h-BN crystals were fabricated by the high-pressure techniques [41], and we used the scotch tape method to mechanically exfoliate the finite-area (below 50 μm ´50 μm) h-BN flakes with 10-50 nm thickness as only for dry transfer methods [42]. High-quality and wafer-scale SL mediator-assisted CVD MoS 2 or WS 2 on commercial p-type doping Si substrate capped with 285-300 nm SiO 2 wafer by thermal oxidation methods [43] were successfully grown by 40 nm MoO 3 /WO 3 deposited on graphite paper and 100 SCCM of H 2 S gas as precursors.…”

Section: Methodsmentioning

confidence: 99%

Enhancing optical characteristics of mediator-assisted wafer-scale MoS₂ and WS₂ on h-BN

Chiu¹,

Li²,

Ci³

et al. 2023

Nanotechnology

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Two-dimensional (2D) materials and their heterostructures exhibit intriguing optoelectronic properties; thus, they are good platforms for exploring fundamental research and further facilitating real device applications. The key is to preserve the high quality and intrinsic properties of 2D materials and their heterojunction interface even in production scale during the transfer and assembly process so as to apply in semiconductor manufacturing field. In this study, we successfully adopted a wet transfer existing method to separate mediator-assisted wafer-scale from SiO2/Si growing wafer for the first time with intermediate annealing to fabricate wafer-scale MoS2/h-BN and WS2/h-BN heterostructures on a SiO2/Si wafer. Interestingly, the high-quality wafer-scale 2D material heterostructure optical properties were enhanced and confirmed by Raman and photoluminescence spectroscopy. Our approach can be applied to other 2D materials and expedite mass production for industrial applications.

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Section: Methodsmentioning

confidence: 99%

Enhancing optical characteristics of mediator-assisted wafer-scale MoS₂ and WS₂ on h-BN

Chiu¹,

Li²,

Ci³

et al. 2023

Nanotechnology

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“…In order to fabricate high-quality single-layer SnSe 2 /CVD graphene/h-BN quantum devices, we adopted the scotch tape method to mechanically exfoliate 20 ∼ 50 nm h-BN layers and placed them on a 300 nm-thick SiO 2 wafer as the based plane so as to improve single-layer SnSe 2 /CVD graphene mobility. Furthermore, we used poly(bisphenol A carbonate) (PC) to transfer single-layer SnSe 2 /CVD graphene to the h-BN based plane by our two-dimensional material transferring manipulator [24,[29][30][31] and put the sample to chloroform in 10 min to remove PC so as to maintain the ideal cleanness as the side view of schematic diagram in figure 2(a) [32]. Six Cr/Au contacts (of 5 and 80 nm thickness) were patterned using e-beam lithography and lift-off processing and annealed at 500 • C with Ar/H 2 (9:1) mixing gases for 1 h so as to clean the PC and PMMA residues on the single-layer SnSe 2 /CVD graphene/h-BN device as shown in figure 2…”

Section: Methodsmentioning

confidence: 99%

“…Based on the concept of structure and working principle of the device, the bottom graphene layer can assist in the growth of single-layer SnSe 2 and produce high-quality 2D interface [23]. Moreover, the bottom hexagonal boron nitride (h-BN) flake could enhance coherent transport in disordered 2D systems [24]. Such a hybrid single-layer SnSe 2 /graphene structure shows a record-breaking thermoelectric figure of merit ZT = 2.34 [23].…”

Section: Introductionmentioning

confidence: 99%

Tuning weak localization in single-layer disordered SnSe₂/graphene/h-BN field-effect device

Chen¹,

Chuang²,

Wang³

et al. 2022

2D Mater.

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We report fabrication and measurements of single-layer SnSe2/chemical vapor deposition graphene/h-BN field-effect device. The coherent magnetotransport properties of such a hybrid system are systematically studied so as to obtain a good understanding of the structure which may find potential applications in thermoelectricity, flexible electronics, quantum coherent sensor as well as stress sensing. We observed weak localization well described by the Hikami-Larkin-Nagaoka model and the phase coherence length is around 540 nm for VBG = -20 V at 1 K. The phase coherence length could be effectively changed by controlling the temperature and gate voltage. We also obtain good field-effect dependent properties of atomic-scale SnSe2 ultrathin film/graphene system. Given the current challenges in tuning single-layer SnSe2/CVD graphene on h-BN with a suitable dielectric layer, our results suggest the potential of quantum coherent effect, an effective way for development of future quantum nano-switch device.

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“…Figure 11D–F show that the synthesized few‐layer BN nanosheets consisted of 3–5 layers stacked with a pore diameter of about 20 nm. Considering that most of the boron‐containing precursors are highly toxic, MBE, 85 CVD, 86 and metal–organic chemical vapor deposition 82b are good choices in addition to the traditional nanosheet preparation methods for large‐scale applications. The synthesis conditions are relatively less stringent, the coverage area is only affected by the substrate, and a large number of continuous h‐BNs can be prepared more efficiently; insulating/inert substrates and transition metal substrates are generally used.…”

Section: Typical 2d Semiconductor Nanosheetsmentioning

confidence: 99%

2D semiconductor nanosheets for solar photocatalysis

Cai,

Wei,

et al. 2023

EcoEnergy

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In the advancing world of graphene, highly anisotropic 2D semiconductor nanosheets, notable for their nanometer‐scale thickness, have emerged as a leading innovation, displaying immense potential in the exploration of renewable and clean energy production. These have garnered significant attention from researchers. The nanosheets are marked by their extraordinary electronic, optical, and chemical attributes, positioning them as attractive foundational components for heterogeneous photocatalysts. This review diligently summarizes both the seminal work and ongoing developments pertaining to 2D semiconductor nanosheets and their application to solar energy within the context of heterogeneous photocatalysis. We begin by detailing the distinctive properties of 2D semiconductor nanosheets, concentrating on their pivotal roles in augmenting photocatalytic efficiency, and explaining the intrinsic mechanisms that govern the migration rate of photogenerated carriers on the material's surface. Subsequently, we delineate the methods employed to synthesize typical 2D semiconductor nanosheets. In alignment with the overarching objective of expanding light absorption capacity and accelerating charge transfer, we also examine the current research on the hybridization techniques involving 2D materials of varied dimensions, as well as their deployment in diverse photocatalytic applications. We conclude by identifying promising avenues and potential challenges that await further exploration in this burgeoning field.

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Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

Cited by 8 publications

References 56 publications

Enhancing optical characteristics of mediator-assisted wafer-scale MoS₂ and WS₂ on h-BN

Enhancing optical characteristics of mediator-assisted wafer-scale MoS₂ and WS₂ on h-BN

Tuning weak localization in single-layer disordered SnSe₂/graphene/h-BN field-effect device

2D semiconductor nanosheets for solar photocatalysis

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Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

Cited by 8 publications

References 56 publications

Enhancing optical characteristics of mediator-assisted wafer-scale MoS2 and WS2 on h-BN

Enhancing optical characteristics of mediator-assisted wafer-scale MoS2 and WS2 on h-BN

Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device

2D semiconductor nanosheets for solar photocatalysis

Contact Info

Product

Resources

About

Enhancing optical characteristics of mediator-assisted wafer-scale MoS₂ and WS₂ on h-BN

Enhancing optical characteristics of mediator-assisted wafer-scale MoS₂ and WS₂ on h-BN

Tuning weak localization in single-layer disordered SnSe₂/graphene/h-BN field-effect device