Enhancing optical characteristics of mediator-assisted wafer-scale MoS₂ and WS₂ on h-BN

Abstract

Two-dimensional (2D) materials and their heterostructures exhibit intriguing optoelectronic properties; thus, they are good platforms for exploring fundamental research and further facilitating real device applications. The key is to preserve the high quality and intrinsic properties of 2D materials and their heterojunction interface even in production scale during the transfer and assembly process so as to apply in semiconductor manufacturing field. In this study, we successfully adopted a wet transfer existing method to separate mediator-assisted wafer-scale from SiO2/Si growing wafer for the first time with intermediate annealing to fabricate wafer-scale MoS2/h-BN and WS2/h-BN heterostructures on a SiO2/Si wafer. Interestingly, the high-quality wafer-scale 2D material heterostructure optical properties were enhanced and confirmed by Raman and photoluminescence spectroscopy. Our approach can be applied to other 2D materials and expedite mass production for industrial applications.

Photodetectors integrating waveguides and semiconductor materials

“…Compared to bulk materials, 2D materials with atomically thin limiting thicknesses are capable of enormous quantum effects, which endow them with unique structures and many excellent capabilities, especially in terms of electronic and optoelectronic properties. 9 2D materials have high mechanical strength and good flexibility, can be adapted to a wide range of substrate materials, and are well suited for mature CMOS processing, enabling the large-scale integration of silicon photonic structures. Alternatively, 2D materials have high carrier mobility and no dangling bonds, which can very effectively suppress the dark current of photodetectors and realize room temperature detection with high sensitivity and high-speed photoelectric response.…”

“…4,5 Based on this strategy, in the past decade, researchers have attempted to design and fabricate photodetectors integrating Si with different semiconductor materials, including III–V semiconductor materials, 6,7 germanium, 8 and two-dimensional (2D) semiconductor materials. 9,10 In addition, controlled by self-limiting surface reactions, the atomic layer deposition (ALD) method, a unique preparation process, can be employed to grow 2D semiconductors with high precision, wafer level, and good uniformity and thus widely used in the fields of integrated circuits and optoelectronics. 11 For example, ALD-fabricated photodetectors based on monolayer tungsten trioxide (WO 3 ) have exhibited outstanding optoelectronic properties.…”