Technology and Integration Roadmap for Optoelectronic Memristor

Abstract

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large‐scale parallel synaptic structures, OMs are anticipated to greatly enhance high‐performance and low‐power in‐memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low‐dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.This article is protected by copyright. All rights reserved

Impact of Carrier Gas Flow Rate on the Synthesis of Monolayer WSe2 via Hydrogen-Assisted Chemical Vapor Deposition

“…Their exhibited tunable bandgap range of 1-2 eV reveals the feasibility of subtle electronic structural modifications via layer number adjustments or the application of external pressures, enabling a shift from indirect to direct bandgaps [7]. For instance, monolayer forms of MoS 2 , MoSe 2 , WS 2 , and WSe 2 manifest direct bandgaps, conferring advantages in photovoltaic conversion and optical signal processing [8,9], thereby propelling the development of TMDs in applications such as sensor, photodetection, storage devices, and biomedicine [10][11][12][13][14][15].…”

Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity

“…However, the prevailing theory states that under light stimulation, neutral oxygen vacancies (VOs) are ionized and become positively charged (VO + or VO 2+ ). Following light interruption, a slow deionization process takes place, in which electrons slowly move back to VOs. ,,, The activation energy for neutralization of the ionized VOs strongly influences the decay of the photocurrent, following light irradiation. Notably, this activation energy has been observed to be particularly elevated in indium–gallium-zinc oxide (IGZO) at around 0.7 eV .…”

“…As such, the sensor captures movement as a continuous flow of data rather than a frame-by-frame approach. By allowing each pixel to independently record when triggered, only relevant information is sent to the postprocessing stages. − This novel approach not only produces far less data than the conventional one, resulting in increased energy efficiency but also significantly decreases the response time of the system. Emerging optoelectronic memories, using both light and electrical signals as inputs, can behave as sensory artificial synapses with high energy efficiency, low crosstalk, and fast data processing and are, thus, suitable for spiking neural network (SNN) hardware applications in neuromorphic vision sensors. , …”