Hexagonal boron nitride (h-BN) has received a great deal of attention as a substrate material for high-performance graphene electronics because it has an atomically smooth surface, lattice constant similar to that of graphene, large optical phonon modes, and a large electrical band gap. Herein, we report the largescale synthesis of high-quality h-BN nanosheets in a chemical vapor deposition (CVD) process by controlling the surface morphologies of the copper (Cu) catalysts. It was found that morphology control of the Cu foil is much critical for the formation of the pure h-BN nanosheets as well as the improvement of their crystallinity. For the first time, we demonstrate the performance enhancement of CVDbased graphene devices with large-scale h-BN nanosheets. The mobility of the graphene device on the h-BN nanosheets was increased 3 times compared to that without the h-BN nanosheets. The on−off ratio of the drain current is 2 times higher than that of the graphene device without h-BN. This work suggests that high-quality h-BN nanosheets based on CVD are very promising for high-performance large-area graphene electronics.
Carbon nanotubes (CNTs), either single wall carbon nanotubes (SWNTs) or multiwall carbon nanotubes (MWNTs), can improve the thermoelectric properties of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT : PSS), but it requires addition of 30-40 wt% CNTs. We report that the figure of merit (ZT) value of PEDOT : PSS thin film for thermoelectric property is increased about 10 times by incorporating 2 wt% of graphene. PEDOT : PSS thin films containing 1, 2, 3 wt% graphene are prepared by solution spin coating method. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses identified the strong π-π interactions which facilitated the dispersion between graphene and PEDOT : PSS. The uniformly distributed graphene increased the interfacial area by 2-10 times as compared with CNT based on the same weight. The power factor and ZT value of PEDOT : PSS thin film containing 2 wt% graphene was 11.09 μW mK(-2) and 2.1 × 10(-2), respectively. This enhancement arises from the facilitated carrier transfer between PEDOT : PSS and graphene as well as the high electron mobility of graphene (200,000 cm(2) V(-1) s(-1)). Furthermore the porous structure of the thin film decreases the thermal conductivity resulting in a high ZT value, which is higher by 20% than that for a PEDOT : PSS thin film containing 35 wt% SWNTs.
Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.
An ambipolar dual-channel field-effect transistor (FET) with a WSe /MoS heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS and WSe , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe /MoS dual-channel FET.
Molybdenum disulfide (MoS) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS flake are fabricated on hBN and SiO substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS-SiO and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS layer with a single hBN on both the devices. The device to device variations induced by different MoS layer is also eliminated by employing a single MoS layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 cm on hBN substrate as compared to 1.1 × 10 cm on SiO substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS FETs.
We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous and periodic oscillations superimposed upon ballistic conductance steps are observed when the conductance through the dot G exceeds 2e 2 /h. We ascribe the observed conductance oscillations to evidence for Coulomb charging effects in an open dot. This is supported by the evolution of the oscillating features for G > 2e 2 /h as a function of both temperature and barrier transparency.
Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact resistance at the metal–TMDC interface plagues the realization of high-performance devices. Here, an effective metal–interlayer–semiconductor (MIS) contact is demonstrated, wherein an ultrathin ZnO interlayer is inserted between the metal electrode and MoS2, providing damage-free and clean interfaces at electrical contacts. Using TEM imaging, we show that the contact interfaces were atomically clean without any apparent damages. Compared to conventional Ti/MoS2 contacts, the MoS2 devices with a Ti/ZnO/MoS2 contact exhibit a very low contact resistance of 0.9 kΩ μm. These improvements are attributed to the following mechanisms: (a) Fermi-level depinning at the metal/MoS2 interface by reducing interface disorder and (b) presence of interface dipole at the metal/ZnO interface, consequently reducing the Schottky barrier and contact resistance. Further, the contact resistivity of a Ti/ZnO/MoS2 contact is insensitive to the variation of ZnO thickness, which facilitates large-scale production. Our work not only elucidates the underlying mechanisms for the operation of the MIS contact but also provides a simple and damage-free strategy for conventional aggressive metal deposition that is potentially useful for the realization of large-scale 2D electronics with low-resistance contacts.
InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications.
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