We report highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer. We have successfully demonstrated highly bright red, green, and blue QLEDs showing maximum luminances up to 23,040, 218,800, and 2250 cd/m(2), and external quantum efficiencies of 7.3, 5.8, and 1.7%, respectively. It is also noticeable that they showed turn-on voltages as low as the bandgap energy of each QD and long operational lifetime, mainly attributed to the direct exciton recombination within QDs through the inverted device structure. These results signify a remarkable progress in QLEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.

Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection.

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We demonstrate bright, efficient, and environmentally benign InP quantum dot (QD)-based light-emitting diodes (QLEDs) through the direct charge carrier injection into QDs and the efficient radiative exciton recombination within QDs. The direct exciton formation within QDs is facilitated by an adoption of a solution-processed, thin conjugated polyelectrolyte layer, which reduces the electron injection barrier between cathode and QDs via vacuum level shift and promotes the charge carrier balance within QDs. The efficient radiative recombination of these excitons is enabled in structurally engineered InP@ZnSeS heterostructured QDs, in which excitons in the InP domain are effectively passivated by thick ZnSeS composition-gradient shells. The resulting QLEDs record 3.46% of external quantum efficiency and 3900 cd m(-2) of maximum brightness, which represent 10-fold increase in device efficiency and 5-fold increase in brightness compared with previous reports. We believe that such a comprehensive scheme in designing device architecture and the structural formulation of QDs provides a reasonable guideline for practical realization of environmentally benign, high-performance QLEDs in the future.

CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.

Highly efficient green‐light‐emitting diodes (LEDs) based on CdSe@ZnS quantum dots (QDs) with a chemical‐composition gradient are demonstrated. Through the moderate control of QD coverage in multilayered devices, excellent device performance has been achieved. The color‐saturated green‐light emission (see figure for Commission Internationale de l'Eclairage (CIE) co‐ordinates) is mainly from the QD layers (more than 99% of total emission).

Utilizing the reactivity difference between TOPSe and TOPS, we synthesized InP@ZnSeS QDs with the composition gradient in a radial direction where ZnSe alleviated lattice strain and ZnS protected QDs from degradation so that we achieved QDs with high QE and photo/chemical stability. In terms of systematic investigation on the relationship between the shell nanostructure and QD stability, we demonstrated that QDs with thick gradient shells exhibited high QE and much enhanced stability against the shell degradation under UV irradiation, ligand exchange, or rigorous purification. This enhanced stability of InP@ZnSeS QDs is attributed to the improved uniformity of composition gradient shells, the efficient confinement of exciton wavefunctions, and the minimized surface oxidation and non-radiative decay via surface states generated by photo-oxidation or ligand exchange. Using InP@ZnSeS QDs with enhanced stability, we were able to demonstrate InP-based colloidal green-emitting QD-LEDs. Although the current status of InP@ZnSeS QDs is not fully optimized to realize practical optoelectronic devices, the approach taken in the present study (i.e., the composition gradient shell structure naturally made from reactivity difference in precursors) will give clues to facilitate the synthesis of InP QDs with advanced nanostructures.

A systematic analysis of the exciton-recombination zone within all-quantum dot (QD) multilayer films prepared by a layer-by-layer assembly method was made, using sensing QD layers in QD-based light-emitting diodes (QLEDs). Large area practical multicolored colloidal QLEDs were also demonstrated by patterning and placing variously colored QDs (red, orange, yellow-green, and green) in the exciton-recombination zone.