Large InSe single crystals grown from stoichiometric and non-stoichiometric melts

Electrodeposition and Characterization of Cu(In, Al)Se<sub>2</sub> for Applications in Thin Film Tandem Solar Cells

“…The optical band gaps value due to the additional transition in the case of this later film is found to 1.36 eV. As the optical band gap of InSe reported by De Blasi et al was 1.32 eV [24] and according to the above XRD analysis which confirmed the mixed phases (CIASe and InSe) in the film annealed at 350˚C, this additional optical transition is attributed to InSe phase.…”

Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

“…The best crystals were obtained from a molar mixture containing 52% In and 48% Se [23]. The doping Sn is introduced into the InSe polycrystalline powder as a compound (SnSe) with Sn concentration of 0.03 at.%.…”

“…The layers are bound by weak Van www.elsevier.com/locate/apsusc Applied Surface Science 253 (2007) [3899][3900][3901][3902][3903][3904][3905] der Waals-type interactions. The physical properties of this strongly anisotropic material are of considerable interest, and in recent years, particular attention has been devoted to the study of the InSe electrical and optical properties with the idea of its possible applications in technology [23][24][25][26][27][28][29]. InSe has been shown to be a new material with the mobility of majority carriers along the layers ranges between 10 2 and 10 3 cm 2 V À1 s À1 [23,[29][30][31].…”

“…Each covalently bonded layer consists of four monoatomic sheets in order In-Se-Se-In [23]. The layers are bound by weak Van www.elsevier.com/locate/apsusc Applied Surface Science 253 (2007) [3899][3900][3901][3902][3903][3904][3905] der Waals-type interactions.…”

Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature

“…These values of the characteristic energy E 00 values are higher about 1.5-2.0 times than the theoretical value of 10 meV. To understand the possible origin of the high characteristic energy, it should be underlined that E 00 is connected with the transmission probability [47][48][49][58][59][60][61]. On one hand, it characterizes the electric field at the semiconductor surface for an applied bias through the carrier concentration and dielectric constant.…”