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Good single crystals of gallium telluride have been grown from the melt by Bridgman‐Stockbarger method, and, for the first time, from the vapour by using two methods of growth: 1) closed tube sublimation, and 2) iodine assisted chemical transport. The electrical resistivity and Hall mobility of different crystals have been measured in the temperature range from 77 to 300 °K. All the samples investigated were of p‐type in the whole temperature range. The results indicate the presence of an acceptor level lying at 74 meV from the valence band in melt grown samples, while in vapour grown ones an acceptor at 152 meV is present. The parameters of these centers are determined by a best fit procedure on the basis of single‐donor‐single‐acceptor model. The comparison between electrical and transport properties of the crystals grown from the melt and from the vapour is thoroughly discussed. Finally the value of the valence band density of states effective mass, determined for the first time for GaTe, is 0.6m_.