Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

Abstract

A detailed study of the formation of iridium silicide obtained by ultrahigh vacuum annealing and atmospheric rapid thermal processing is proposed using x-ray photoelectron spectroscopy ͑XPS͒, transmission electron microscopy ͑TEM͒, and electrical characterizations. Using XPS analysis, the stoichiometry of each silicide phase ͑IrSi, IrSi 1.6 ͒ is identified. A model based on the variation of the measured intensity of the Ir 4f spectra is used to obtain the kinetic coefficients of reaction of Ir silicidation ͑E A = 2.48 eV, D 0 =9 cm 2 /s͒. TEM cross sections indicate that the roughness of the silicide/silicon interface increases with temperature. Lastly, electrical characteristics are used to identify the optimum annealing temperature to obtain an iridium silicide contact with the lowest Schottky barrier height to holes.

Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC

“…The kinetic of formation of iridium silicides is controlled by diffusion of silicon species through the incipient layer of silicide. One of the latest analysis of iridium silicide formation on silicon shows that the interval of complete silicidation ranges between 450 8C and 530 8C [11]. It suggests that the transition temperature is higher on silicon carbide and iridium is a very promising Schottky barrier material for high temperature electronics.…”

Effects of the Mo composition of Mo-alloyed Yb/Si contacts on the microstructures and electrical properties

“…Among the RE silicides, ytterbium silicide is a promising contact material, because it has a very low SBH on n-type silicon (0.2-0.4 eV) and is reported to have an epitaxial relation with Si(001) and (111). [7][8][9][10][11][12][13][14][15][16][17][18] Zhu et al reported that Yb silicide has a SBH of 0.27 eV with n-type Si by estimation of the SBH of the Yb silicide=p-Si contact. 19) There are several issues with this material as a contact material, including its high vulnerability against oxidation.…”