We report on the electrical characterisation and Raman spectroscopy of CVD copper-grown graphene transferred onto a Si/SiO 2 substrate by the high-speed (1mm per second) electrochemical delamination. We determine graphene's sheet resistance, carrier mobility and concentration as well as its physical quality as a function of the electolyte concentration. Graphene's electrical properties are investigated with standard Hall measurements in van der Pauw geometry and a contactless method that employs a single-post dielectric resonator operating at microwave frequencies.These properties are related to the widely used copper etching technique. The results prove that the high-speed electrochemical delamination provides good quality graphene within a short timescale.
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