2011
DOI: 10.1016/j.tsf.2011.04.032
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Evolution of optical properties with deposition time of silicon nitride and diamond-like carbon films deposited by radio-frequency plasma-enhanced chemical vapor deposition method

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Cited by 42 publications
(34 citation statements)
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“…It should be noted that at the initial stage of DLC film growth, significant densification of the structure and variation of hydrogen content takes place, resulting in increase of the refractive index of the film with deposition time. Thus, varying the time of the thin‐film deposition process it is possible to change optical properties of DLC by modifying their structure . On the other hand, the DLC properties are very sensitive to the gas composition and other technological conditions during deposition .…”
Section: Resultsmentioning
confidence: 99%
“…It should be noted that at the initial stage of DLC film growth, significant densification of the structure and variation of hydrogen content takes place, resulting in increase of the refractive index of the film with deposition time. Thus, varying the time of the thin‐film deposition process it is possible to change optical properties of DLC by modifying their structure . On the other hand, the DLC properties are very sensitive to the gas composition and other technological conditions during deposition .…”
Section: Resultsmentioning
confidence: 99%
“…In this respect, Tables II and III present details of very recent vapor phase deposition techniques of SiN x thin films, along with a synopsis of intended applications. 15,16,[20][21][22][23][24][25][31][32][33][34][36][37][38] More specifically, Table II summarizes PVD and CVD work, while Table III focuses exclusively on atomic layer deposition ALD.…”
mentioning
confidence: 99%
“…Silicon nitride (SiN x ) oers high n comparing to the one of ber cladding. The lms can be deposited with radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method capable for easy and precise tuning of n and thickness of the lms [6]. These properties are crucial for obtaining high sensitivity of the berbased device.…”
Section: Introductionmentioning
confidence: 99%