Properties of Chemical Vapor Deposition Graphene Transferred by High-Speed Electrochemical Delamination

Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Sobieski, Jan; Caban, P.; Szmidt, J.; Strupiński, Włodek

doi:10.1021/jp4032139

Cited by 76 publications

(72 citation statements)

References 19 publications

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“…Graphene grown on 12 lm thick 3N JTCHTE GOULD Electronics copper foil in Aixtron VP508 reactor was transferred onto a 4H-SiC substrate through the PMMA-mediated electrochemical delamination method. 61 Prior to transfer, the substrate underwent a process of hydrogen etching in 1600 C to promote step bunching on its surface. An identical pattern of nine rotated Hall bars was fabricated accordingly to the above presented details.…”

Section: Methodsmentioning

confidence: 99%

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Ciuk

Çakmakyapan

Özbay

et al. 2014

Journal of Applied Physics

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The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ∼ 10? nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ∼ 190? Ωμ m for step height hS? =? 10? nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications. © 2014 AIP Publishing LLC

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Section: Methodsmentioning

confidence: 99%

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Ciuk

Çakmakyapan

Özbay

et al. 2014

Journal of Applied Physics

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“…Afterwards, both the hydrocarbon (e.g., CH 4 or C 3 H 8 ) and the H 2 gas are introduced into the reactor for a couple of minutes to grow the graphene layer. Finally, the copper substrate covered with graphene films is cooled down to room temperature in an Ar atmosphere [15][16][17][18].…”

Section: Synthesis Of Cvd-graphenementioning

confidence: 99%

CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

Januszko

Iwan

Maleczek

et al. 2017

Journal of Nanomaterials

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The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom6). Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate) (PET) via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD) technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO 2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m 2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

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“…The pre-growth treatment of copper included annealing at 1000 • C in Ar atmosphere followed by H 2 etching at a pressure of 20 mbar [12]. The purpose of this step is to improve the quality and enlarge the grain size of copper as well as to ensure a reduction of oxides from the copper surface.…”

Section: Monolayer Graphene Transfermentioning

confidence: 99%

“…Later, methane was introduced into the reactor with time and flow rate settings ensuring monolayer graphene growth. The as-grown graphene was covered with a 200 nm-thin layer of PMMA by spin-coating and transferred onto an SOI photonic chip by means of the electrochemical delamination method carried out in 1M aqueous solution of potassium chloride [12].…”

Section: Monolayer Graphene Transfermentioning

confidence: 99%

Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides

Erps¹,

Ciuk²,

Pasternak³

et al. 2015

Opt. Express

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Abstract:We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectroscopy and atomic force microscopy that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method.

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Properties of Chemical Vapor Deposition Graphene Transferred by High-Speed Electrochemical Delamination

Cited by 76 publications

References 19 publications

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides

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