Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides

Erps, Jürgen Van; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupiński, Włodek; Put, Steven Van; Steenberge, Geert Van; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

doi:10.1364/oe.23.026639

Cited by 23 publications

(21 citation statements)

References 26 publications

(31 reference statements)

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“…For the SOI waveguides covered with graphene, the level of spectral broadening is reduced with increasing graphene length, and for sufficiently long graphene sections even spectral narrowing is observed. We point out that, since the graphene cover layers are situated in the centre of the 400 µm-long waveguide sections [17], all waveguides have an uncovered SOI section at the input with γ SOI > 0 establishing spectral broadening. As shown in Fig.…”

Section: Experimental Setup and Resultsmentioning

confidence: 97%

“…Hereto, we used α SOI = 3 dB/cm and γ SOI = +0.3 W −1 mm −1 [12] in the waveguide section, and we assumed a scaling of these parameters inversely proportional with the waveguide width in the tapered sections. The graphene deposition on the waveguides has been described in our earlier work [17]. Chemical-vapordeposition-grown graphene was transferred on the SOI chip, inducing a high linear waveguide loss of α gr-on-SOI = 1320 dB/cm at 1550 nm, and the layer was patterned to vary the length of the graphene sections on top of the waveguides [17].…”

Section: Experimental Setup and Resultsmentioning

confidence: 99%

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Negative Kerr Nonlinearity of Graphene as seen via Chirped-Pulse-Pumped Self-Phase Modulation

et al. 2016

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We experimentally demonstrate a negative Kerr nonlinearity for quasi-undoped graphene. Hereto, we introduce the method of chirped-pulse-pumped self-phase modulation and apply it to graphenecovered silicon waveguides at telecom wavelengths. The extracted Kerr-nonlinear index for graphene equals n2,gr = −10 −13 m 2 /W. Whereas the sign of n2,gr turns out to be negative in contrast to what has been assumed so far, its magnitude is in correspondence with that observed in earlier experiments. Graphene's negative Kerr nonlinearity strongly impacts how graphene should be exploited for enhancing the nonlinear response of photonic (integrated) devices exhibiting a positive nonlinearity. It also opens up the possibility of using graphene to annihilate unwanted nonlinear effects in such devices, to develop unexplored approaches for establishing Kerr processes, and to extend the scope of the "periodic poling" method often used for second-order nonlinearities towards third-order Kerr processes. Because of the generic nature of the chirped-pulse-pumped self-phase modulation method, it will allow fully characterizing the Kerr nonlinearity of essentially any novel (2D) material.

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Section: Experimental Setup and Resultsmentioning

confidence: 97%

Section: Experimental Setup and Resultsmentioning

confidence: 99%

Negative Kerr Nonlinearity of Graphene as seen via Chirped-Pulse-Pumped Self-Phase Modulation

et al. 2016

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“…1a . The graphene top layer grown by means of chemical vapor deposition features a carrier density of +6.5 × 10 12 cm −2 as a result of unintentional doping 28 , and is patterned with plasma etching 29 to create sections with variable length L between 220 and 1100 μm on the waveguides as shown in Fig. 1b .…”

Section: Resultsmentioning

confidence: 99%

Graphene’s nonlinear-optical physics revealed through exponentially growing self-phase modulation

Vermeulen¹,

Castelló‐Lurbe²,

Khoder³

et al. 2018

Nat Commun

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Graphene is considered a record-performance nonlinear-optical material on the basis of numerous experiments. The observed strong nonlinear response ascribed to the refractive part of graphene’s electronic third-order susceptibility χ(3) cannot, however, be explained using the relatively modest χ(3) value theoretically predicted for the 2D material. Here we solve this long-standing paradox and demonstrate that, rather than χ(3)-based refraction, a complex phenomenon which we call saturable photoexcited-carrier refraction is at the heart of nonlinear-optical interactions in graphene such as self-phase modulation. Saturable photoexcited-carrier refraction is found to enable self-phase modulation of picosecond optical pulses with exponential-like bandwidth growth along graphene-covered waveguides. Our theory allows explanation of these extraordinary experimental results both qualitatively and quantitatively. It also supports the graphene nonlinearities measured in previous self-phase modulation and self-(de)focusing (Z-scan) experiments. This work signifies a paradigm shift in the understanding of 2D-material nonlinearities and finally enables their full exploitation in next-generation nonlinear-optical devices.

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“…One attractive possibility to pattern graphene is with ultrafast lasers [20][21][22][23][24][25][26]. Additionally to common benefits of using ultrafast lasers for patterning, like minimized heat affected zone, flexibility and selectivity, this method is especially beneficial for graphene patterning.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond laser patterning of graphene electrodes for thin-film transistors

Kasischke

Subaşı

Bock

et al. 2019

Applied Surface Science

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Email address: kasischke@lat.rub.de (Maren Kasischke) The aim of this study is to assess femtosecond laser patterning of graphene in air and in vacuum for the application as source and drain electrodes in thin-film transistors (TFTs). The analysis of the laser-patterned graphene with scanning electron microscopy, atomic force microscopy and Raman spectroscopy showed that processing in vacuum leads to less debris formation and thus re-deposited carbonaceous material on the sample compared to laser processing in air. It was found that the debris reduction due to patterning in vacuum improves the TFT characteristics significantly. Hysteresis disappears, the mobility is enhanced by an order of magnitude and the subthreshold swing is reduced from S sub = 2.5 V/dec to S sub = 1.5 V/dec.

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Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides

Cited by 23 publications

References 26 publications

Negative Kerr Nonlinearity of Graphene as seen via Chirped-Pulse-Pumped Self-Phase Modulation

Negative Kerr Nonlinearity of Graphene as seen via Chirped-Pulse-Pumped Self-Phase Modulation

Graphene’s nonlinear-optical physics revealed through exponentially growing self-phase modulation

Femtosecond laser patterning of graphene electrodes for thin-film transistors

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