Introduction to Schottky‐Barrier MOS Architectures: Concept, Challenges, Material Engineering and Device Integration

Dubois, Emmanuel; Larrieu, Guilhem; Valentin, Romain; Breil, N.; Danneville, F.

doi:10.1002/9781118621523.ch5

Cited by 1 publication

(1 citation statement)

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“…This means that it does By extracting the capacitances of membrane-suspended comb structures, the above study shows that the coupling contribution of the substrate, whether it is HR or TR, remains significant, which constitutes a point of concern on RF isolation and crosstalk requirements. In the physics of metal/semiconductor contacts, it is well known that the Schottky barrier height is not given by the work function difference between materials forming the junction, contrary to what a first order interpretation might predict [30]. One possible interpretation of this phenomenon, well known as the 'fixed-separation model' [31], is to recognise the dominant role of trap states present in the silicon bandgap at the Schottky interface.…”

Section: Device Structure Rf Ports and DC Biasmentioning

confidence: 97%

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

et al. 2022

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With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits that are able to meet highly challenging RF front end specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF front ends. In this context, a fast, flexible and local laser ablation technique of the silicon handler allows for the membrane suspension of large millimeter-scale circuits. This approach enables the evaluation of the ultimate performance in the absence of the substrate, i.e., without dissipative losses and substrate-induced non-linear effects, on capacitive comb coupling structures and RF switches. Compared to high-resistivity SOI substrates, the high frequency characterization of RF membrane switches reveals a superior linearity performance with a reduction in second and third harmonics by 17.7 dB and 7.8 dB, respectively. S-parameter analysis also reveals that membrane suspension entails insertion losses that are improved by 0.38 dB and signal reflection lowered by 4 dB due to a reduced off-state capacitance. With reference to a trap-rich substrate, the membrane suspension also achieves an additional 7.8 dB reduction in the second harmonic, indicating that there is still scope for improvement in this figure of merit. The obtained results demonstrate a new way to evaluate optimized circuit performance using post-fabrication substrate engineering.

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Section: Device Structure Rf Ports and DC Biasmentioning

confidence: 97%