JFET/SOS devices. II. Gamma-radiation-induced effects

Halle, L. F.; Zietlow, Thomas C.; Barnes, C. E.

doi:10.1109/16.2462

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…The simulated results using the accurate process-dependent circuit-model are within 3% from experimental measurements, shown in Figs. 4 Fig. 11.…”

Section: Soi Jfet Analytical Model and Simulationmentioning

confidence: 97%

“…A special case of the model for SiliconOn-Sapphire (SOS) JFTs was introduced by the authors in [1,2]. The interface between Si and Sapphire has two main effects on the device performance [3,4,5]: The first is due to lattice mismatch between the Si layer and the substrate, which causes high density of defects, such as stacking faults, misfit and other dislocations. The second is due to thermal mismatch, as the thermal expansion of sapphire is ~ 2 times the thermal expansion of Si.…”

Section: Introductionmentioning

confidence: 99%

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Process-Dependent Circuit Modeling and Simulation of SOI JFETs: Digital VLSI Applications

Abdel-Aty-Zohdy

Talkhan

1993

SIMULATION

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Accurate circuit modeling and simulation ofSilicon-on-Insulator (SOI) enhancement and depletion Junction Field-Effect transistors (JFETs) is presented. The nonuniformity in FET device parameters along the channel depth (due to fabrication processes), is taken into account. This is typical in SOI and other thin-film structures. Since SOI fabrication processes parameters are represented, in our model, by a closed form mobility variation, improved model accuracy is guaranteed. Simulation results are found to be within less than 3% of actual measurements. Small-signal circuit-model parameters are determined for SOI FJETs and then evaluated for further logic applications. Inverters with a channel Enhancenient-JFET (E-JFET) drivers and nchannel depletion-JFET loads (E/D inverters) are also considered with different supply voltage values, device parameters and digital applications.

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“…The simulated results using the accurate process-dependent circuit-model are within 3% from experimental measurements, shown in Figs. 4 Fig. 11.…”

Section: Soi Jfet Analytical Model and Simulationmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%