Abstract:Accurate circuit modeling and simulation ofSilicon-on-Insulator (SOI) enhancement and depletion Junction Field-Effect transistors (JFETs) is presented. The nonuniformity in FET device parameters along the channel depth (due to fabrication processes), is taken into account. This is typical in SOI and other thin-film structures. Since SOI fabrication processes parameters are represented, in our model, by a closed form mobility variation, improved model accuracy is guaranteed. Simulation results are found to be w… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.