An ion implantation amorphization technique for the preparation of thin epitaxially regrown silicon layers has been studied. 28Si+ ions are implanted into low pressure chemical vapor deposition (LPCVD) silicon films which have been deposited on silicon wafers. This causes amorphization of the films and dispersal of the buried native oxide layer on the wafers. Subsequent thermal annealing results in epitaxial regrowth of the amorphized films. The resultant crystal quality of the regrown films and substrates was studied by x-ray, Raman, Rutherford backscattering, wet chemical etching, and electrical measurements. The influence of the different process variables was investigated. Although single crystal regrown epitaxial films are obtained, the substrates are damaged. This is probably a combined result of the implant damage, ion mixing, and precipitation of the driven in oxygen. Improvements to the process are discussed.
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