Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O

Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello; Ganem, J.‐J.; Trimaille, I.; Rigo, S.

doi:10.1063/1.118804

Cited by 23 publications

(9 citation statements)

References 20 publications

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“…5 Finally, the possibility to control the refractive index between the silicon nitride and silicon oxide values allows several optical applications, such as graded index films or antireflection coatings. [6][7][8] Concerning the growth of silicon oxynitride films ͑in the following SiO x N y H z ), research is mainly focused on those techniques with a low thermal budget, according to the requirements of ultralarge scale integration technology, such as rapid thermal processing 4,9,10 or different Plasma Enhanced Deposition techniques. 1,5,6,[11][12][13][14][15] Among these, the electron cyclotron resonance plasma chemical vapor deposition ͑ECR-PECVD͒ method shows several interesting advantages in addition to the low temperature requirement.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

Prado

Andrés

Mártil

et al. 2003

Journal of Applied Physics

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SiO x N y H z films were deposited from O 2 , N 2 , and SiH 4 gas mixtures at room temperature using the electron cyclotron resonance plasma method. The absolute concentrations of all the species present in the films ͑Si, O, N, and H͒ were measured with high precision by heavy-ion elastic recoil detection analysis. The composition of the films was controlled over the whole composition range by adjusting the precursor gases flow ratio during deposition. The relative incorporation of O and N is determined by the ratio Qϭ(O 2 )/(SiH 4 ) and the relative content of Si is determined by R ϭ͓(O 2 )ϩ(N 2 )͔/(SiH 4 ) where (SiH 4 ), (O 2 ), and (N 2 ) are the SiH 4 , O 2 , and N 2 gas flows, respectively. The optical properties ͑infrared absorption and refractive index͒ and the density of paramagnetic defects were analyzed in dependence on the film composition. Single-phase homogeneous films were obtained at low SiH 4 partial pressure during deposition; while those samples deposited at high SiH 4 partial pressure show evidence of separation of two phases. The refractive index was controlled over the whole range between silicon nitride and silicon oxide, with values slightly lower than in stoichiometric films due to the incorporation of H, which results in a lower density of the films. The most important paramagnetic defects detected in the films were the K center and the EЈ center. Defects related to N were also detected in some samples. The total density of defects in SiO x N y H z films was higher than in SiO 2 and lower than in silicon nitride films.

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Section: Introductionmentioning

confidence: 99%

Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

Prado

Andrés

Mártil

et al. 2003

Journal of Applied Physics

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“…Further details of the reoxidation mechanism could be understood through isotopic substitution experiments. 8,[26][27][28][29][30] Atomic oxygen is much more reactive than NO or O 2 and this enhances the oxidation and nitrogen removal from the film. There is little or no nitrogen loss after oxidation, as indicated by the error margins of the NRA data from Fig.…”

Section: Reoxidation Mechanism Comparisonsmentioning

confidence: 99%

“…8,[26][27][28]19,30,29,17 It is preferable to locate most of the nitrogen away from the oxynitride/silicon interface so as to minimize the negative effects of excess interfacial nitrogen on interface trap density, device threshold voltage, and mobility. Reoxidation in NO and O 2 are similar in that both species likely dissociate to some extent at the wafer surface as well as diffuse through the nitride film, incorporating oxygen and replacing some of the film's nitrogen.…”

Section: Reoxidation Mechanism Comparisonsmentioning

confidence: 99%

Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia

D'Emic

Newbury

Scerbo

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Ultrathin silicon oxynitrides have been used successfully as gate dielectrics for advanced complementary metal-oxide semiconductor technologies. Here, the authors compare the growth and material properties of oxynitrides grown by rapid thermal nitridation of silicon in ammonia (RT-NH3) followed by reoxidation in NO, O2, or N2O. While the nitrogen concentration of the film is primarily determined by the RT-NH3 condition, reoxidation causes a slight change in nitrogen content and increase in film thickness which varies depending on the initial nitrogen concentration in the film and the oxidizing conditions used. The nitrogen/oxygen concentration ratio was determined to be sensitive to the reoxidizing species, process pressure, and exposure time. Compositional analysis by medium energy ion scattering indicates similarities in microstructure but differences in nitrogen and oxygen profiles among the different films. Results indicate that reoxidation in NO, O2, or N2O can result in different nitrogen concentrations at the bottom interface under the same process conditions. Thus, the choice of reoxidizing species may be an important decision for a gate dielectric process since the amount and placement of nitrogen needs to be optimized to reduce the impact on device peak mobility and threshold voltage, while still be sufficient to improve hot carrier reliability, reduce defect generation rates and gate leakage current, and suppress boron penetration from the gate electrode [D. A. Buchanan, IBM J. Res. Dev. 43, 245 (1999); M. L. Green et al., J. Appl. Phys. 90, 205 (2001); E. Gusev et al., IBM J. Res. Dev. 43, 265 (1999)].

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“…They observed a correlation between the hydrogen content and the trap densities, and inferred that the memory trap will be the Si-H bond. Nitridation using the NH 3 plasma was one of early methods used to incorporate relatively high ($10-15 at.%) concentrations of N atoms into SiO 2 layers [10][11][12][13][14]. XPS and AES depth profiles show that the N atoms pile up at both the interface and the free surface, depending on the nitridation process [15].…”

Section: Introductionmentioning

confidence: 99%

Formation of ultrathin SixNy layers on silicon utilizing PECVD

Guo

Kurata

Inokuma

et al. 2005

Journal of Non-Crystalline Solids

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Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O

Cited by 23 publications

References 20 publications

Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia

Formation of ultrathin SixNy layers on silicon utilizing PECVD

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