Abstract:Ultrathin silicon oxynitrides have been used successfully as gate dielectrics for advanced complementary metal-oxide semiconductor technologies. Here, the authors compare the growth and material properties of oxynitrides grown by rapid thermal nitridation of silicon in ammonia (RT-NH3) followed by reoxidation in NO, O2, or N2O. While the nitrogen concentration of the film is primarily determined by the RT-NH3 condition, reoxidation causes a slight change in nitrogen content and increase in film thickness which… Show more
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