Formation of ultrathin SixNy layers on silicon utilizing PECVD

Guo, Ruofeng; Kurata, Y.; Inokuma, Takao; Hasegawa, S.

doi:10.1016/j.jnoncrysol.2005.07.015

Cited by 5 publications

(1 citation statement)

References 31 publications

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“…In fact, the nitridation process using NH 3 plasma has been investigated for various applications in microelectronics technology. 8 To estimate the SiN x formation in our experimental conditions, the Si͑001͒ substrates were exposed to NH 3 plasma at 300°C. A few nanometer thick SiN x film formation was confirmed by spectroscopic ellipsometer.…”

Section: Department Of Materials Science and Engineering Pohang Univementioning

confidence: 99%

Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Lee

Son

Kim

2007

Applied Physics Letters

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The silicide formation by annealing plasma-enhanced atomic layer deposition (PE-ALD) Co and physical vapor deposition (PVD) Co was comparatively studied. Very pure Co films were deposited by PE-ALD with CoCp2 and NH3 plasma. However, various analyses have shown that amorphous SiNx interlayer was formed between PE-ALD Co and Si due to the NH3 plasma exposure in contrast with PVD Co. Due to the nitride interlayer, CoSi2 was epitaxially grown from PE-ALD Co by rapid thermal annealing through nitride mediated epitaxy. This process scheme is expected to provide a simple route for contact formation in future nanoscale devices.

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Section: Department Of Materials Science and Engineering Pohang Univementioning

confidence: 99%

Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Lee

Son

Kim

2007

Applied Physics Letters

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All hot wire CVD TFTs with high deposition rate silicon nitride (3nm/s)

Schropp

Nishizaki

Houweling

et al. 2008

Solid-State Electronics

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On the effects of double-step anneal treatments on light emission from Er-doped Si-rich silicon oxide

Heng

Zalloum

Wójcik

et al. 2008

Journal of Applied Physics

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Effect of ion-irradiation induced defects on the nanocluster Si ∕ Er 3 + coupling inEr-doped silicon-rich silicon oxide Appl. Phys. Lett. 91, 021909 (2007); 10.1063/1.2752538 Formation and oxidation of Si nanoclusters in Er-doped Si-rich Si O x J. Appl. Phys. 97, 096108 (2005); 10.1063/1.1894600Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputteringWe have studied photoluminescence ͑PL͒ from an Er-doped Si-rich Si oxide ͑SRSO͒ film thermally annealed under different conditions. Compared to the case of annealing in N 2 alone, double-step annealing the film at 875°C in N 2 and then at ϳ850°C in O 2 or vice versa increases Er PL intensities by 10%-15%; while double-step annealing in N 2 +5%H 2 ͑FG͒ and then in O 2 or vice versa yields significant enhancements of the PL from the SRSO matrix and the Er PL intensity decreases differently by exchanging the processing order. Fourier transform infrared spectroscopy indicates that silicon oxynitride forms after annealing in FG ambient, and for the samples initially oxidized, the increase of Er PL intensity after secondary annealing in N 2 ͑or FG͒ is due to more Si nanoclusters being formed. The PL spectra exhibit different annealing behavior with increasing the FG annealing temperature and the processing order. Weak oxygen bonds and silicon oxynitrides are believed to form upon O 2 and FG annealing, respectively, and play important roles in the PL.

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Formation of ultrathin SixNy layers on silicon utilizing PECVD

Cited by 5 publications

References 31 publications

Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

All hot wire CVD TFTs with high deposition rate silicon nitride (3nm/s)

On the effects of double-step anneal treatments on light emission from Er-doped Si-rich silicon oxide

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