Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Lee, Han‐Bo‐Ram; Son, Jong Yeog; Kim, H.

doi:10.1063/1.2742791

Cited by 23 publications

(16 citation statements)

References 10 publications

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“…The growth temperature (T s ) was 300 8C. Further details of PE-ALD-produced Co film growth can be found in our previous report [22]. Si(001) substrates were cleaned by dipping in buffered oxide etchant (6:1) for 10 s followed by rinsing in deionized water and drying using N 2 .…”

Section: Methodsmentioning

confidence: 99%

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Initial Stage Growth during Plasma‐Enhanced Atomic Layer Deposition of Cobalt

Lee

Park

Baik

2012

Chemical Vapor Deposition

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The initial growth of Co thin films during plasma-enhanced atomic layer deposition (PE-ALD) is investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), and synchrotron radiation X-ray reflectivity (SR-XRR). For the PE-ALD of Co, CoCp 2 and NH 3 plasma were used as precursor and reactant, respectively. From XRR simulation, the growth rate at the initial stage of growth did not linearly increase with growth cycles, showing deviation from ideal ALD growth. The low density of PE-ALD-produced Co film up to 100 cycles is observed from XRR and confirmed by AFM and SEM results. The growth behavior of Co is explained by island growth under substrate-inhibited growth mode.

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Section: Methodsmentioning

confidence: 99%

“…The formation of a-SiN x interlayer was found between the Co film and Si substrate due to NH 3 plasma exposure to the Si substrate during the initial growth stage. [4,22] In the current study, we investigated the initial-stage growth of Co thin film by PE-ALD using SR-XRR with complementary analysis tools, AFM, and field emission (FE)SEM.…”

Section: Introductionmentioning

confidence: 99%

Initial Stage Growth during Plasma‐Enhanced Atomic Layer Deposition of Cobalt

Lee

Park

Baik

2012

Chemical Vapor Deposition

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“…238 Note that nitridation is often also employed on purpose, for example, to increase the stability or the relative permittivity (k-value) of oxides. 32,91,119,129,143,209 Plasma-induced damage can also manifest itself by the formation of defects inside the material or at the surface onto which the film is deposited. The bombardment of the substrate by energetic ions, accelerated in the plasma sheath, can lead to bond-breaking, displacement of atoms in the surface region and charge accumulation on dielectric layers.…”

Section: Challenges Of Plasma-assisted Aldmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

729

537

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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“…Previously, we reported Co plasma-enhanced atomic layer deposition (PE-ALD) process by using cobalt bis-cyclopentadienyl (CoCp 2 ) and NH 3 plasma as a precursor and reactant, respectively, producing very pure Co films [13,14]. In this study, we investigated the formation of dielectric layer containing CoSi 2 nanocrystals during the PE-ALD by adding SiH 4 to NH 3 plasma.…”

Section: Introductionmentioning

confidence: 97%

Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Cited by 23 publications

References 10 publications

Initial Stage Growth during Plasma‐Enhanced Atomic Layer Deposition of Cobalt

Initial Stage Growth during Plasma‐Enhanced Atomic Layer Deposition of Cobalt

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

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