Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Growth of Pt Nanowires by Atomic Layer Deposition on Highly Ordered Pyrolytic Graphite

“…In our previous report, a similar morphological transition from separate islands to films was observed on the SiO 2 surface . Island growth is commonly seen in metal ALD systems due to the low wettability and low nucleation rate of metal films at nonmetal surfaces. ,− …”

Effect of O3 on Growth of Pt by Atomic Layer Deposition

“…Atomic layer deposition (ALD) is a technique well suited for metal deposition on 3-D structures because it has high conformality and precise thickness control, the combination of which is not as readily achieved in conventional methods such as physical vapor deposition. , During the initial growth stage of ALD, however, there are deviations from ideal growth, such as nucleation delay or island growth, that can have deleterious effects on the conformality of the very thinnest films. − These deviations are more frequently observed in metal ALD upon a metal oxide surface than in oxide ALD because metal–metal oxide interactions are weaker than those of metal–metal. Because of the weak interactions, metals show lower wettability on metal oxide surfaces than on metal surfaces, leading to more facile agglomeration into metal islands.…”

New Heteroleptic Cobalt Precursors for Deposition of Cobalt-Based Thin Films

“…Cobalt is attractive because of its wide variety of applications, such as catalysis, protective coatings, magnetic information storage, and sensor systems . In microelectronics, the applications of cobalt/cobalt-based thin films include their use as the lining material within interconnected trenches, metallic interconnections, ohmic contacts in silicon-based devices, and as Schottky contacts in the field of optoelectronics . Thin films of cobalt and cobalt oxide are also useful as components of energy storage devices, such as LiCoO 2 in lithium-ion batteries .…”