All hot wire CVD TFTs with high deposition rate silicon nitride (3nm/s)

Schropp, R.E.I.; Nishizaki, Shogo; Houweling, Z.S.; Verlaan, V.; Werf, C.H.M. van der; Matsumura, Hideki

doi:10.1016/j.sse.2007.10.034

Cited by 19 publications

(16 citation statements)

References 26 publications

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“…However, the SiN x gate insulator has not been industrialized because of insufficient deposition rates less than 150 nm/min. Recently, Schropp's and our groups succeeded in fabricating high performance TFT's using SiN x films deposited with rates over 180 nm/min [29]. In addition, the superiority of Cat-CVD aSi TFT to PECVD one is revealed by systematic study of the characteristics of both TFT's.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

New application of Cat-CVD technology and recent status of industrial implementation

Matsumura

Ohdaira

2009

Thin Solid Films

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Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

New application of Cat-CVD technology and recent status of industrial implementation

Matsumura

Ohdaira

2009

Thin Solid Films

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“…5,6 Thin films of silicon nitride are deposited using different types of chemical-vapor deposition ͑CVD͒ and sputtering. 7,8 The material is nonstoichiometric in general and contains considerable amounts of hydrogen depending on the preparation conditions.…”

Section: Introductionmentioning

confidence: 99%

“…7 Interestingly the hot-wire CVD technique also yields high-density films with a similar composition. 8 In this study we investigate a-SiN x : H with equal amounts of silicon and nitrogen ͑x =1͒. Our motivation is to understand the structure and electronic properties of nitrides other than stoichiometric.…”

Section: Introductionmentioning

confidence: 99%

Atomistic models of hydrogenated amorphous silicon nitride from first principles

et al. 2010

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We present a theoretical study of hydrogenated amorphous silicon nitride ͑a-SiN x :H͒, with equal concentrations of Si and N atoms ͑x =1͒, for two considerably different densities ͑2.0 and 3.0 g / cm 3 ͒. Densities and hydrogen concentration were chosen according to experimental data. Using first-principles molecular-dynamics within density-functional theory the models were generated by cooling from the liquid. Where both models have a short-range order resembling that of crystalline Si 3 N 4 because of their different densities and hydrogen concentrations they show marked differences at longer length scales. The low-density nitride forms a percolating network of voids with the internal surfaces passivated by hydrogen. Although some voids are still present for the high-density nitride, this material has a much denser and uniform space filling. The structure factors reveal some tendency for the nonstoichiometric high-density nitride to phase separate into nitrogen rich and poor areas. For our slowest cooling rate ͑0.023 K/fs͒ we obtain models with a modest number of defect states, where the low ͑high͒ density nitride favors undercoordinated ͑overcoordinated͒ defects. Analysis of the structural defects and electronic density of states shows that there is no direct one-to-one correspondence between the structural defects and states in the gap. There are several structural defects that do not contribute to in-gap states and there are in-gap states that do only have little to no contributions from ͑atoms in͒ structural defects. Finally an estimation of the size and cooling rate effects on the amorphous network is reported.

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“…The low H concentration of 9 at.%, specifically the low density of Si-H bonds [7], is an advantage for the use as sidewall and liner material in ultra large scale integration p-type metal-oxide-semiconductor transistors. We have applied HW-SiN x as the gate dielectric in TFTs [8].…”

Section: Silicon Nitride By Hot Wire Cvdmentioning

confidence: 99%

Ultrafast deposition of silicon nitride and semiconductor silicon thin films by hot wire chemical vapor deposition

et al. 2009

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All hot wire CVD TFTs with high deposition rate silicon nitride (3nm/s)

Cited by 19 publications

References 26 publications

New application of Cat-CVD technology and recent status of industrial implementation

New application of Cat-CVD technology and recent status of industrial implementation

Atomistic models of hydrogenated amorphous silicon nitride from first principles

Ultrafast deposition of silicon nitride and semiconductor silicon thin films by hot wire chemical vapor deposition

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