Isothermal Growth of HgCdTe under Controlled Hg Vapor Pressure

Becla, P.; Łagowski, J.; Gatos, H. C.; Jȩdral, L.

doi:10.1149/1.2123692

Cited by 24 publications

(4 citation statements)

References 3 publications

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“…These properties are of fundamental interest since these materials are semiconductors whose features are dominated by stoichiometric vacancies [16]. According to the optical transmission experiments a band gap of 1.2eV has been measured at 300 K in Ga,Te3 [8,91 and the fundamental transition is associated with an excitonic transition [9].…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of Ga2Te3 Crystals

Julien

Ivanov

Ecrepont

et al. 1994

Phys. Stat. Sol. (a)

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Optical and electrical properties of the gallium telluride Ga2Te3 are reported. Lattice modes are investigated using far‐infrared spectroscopy and polarized Raman scattering experiments. The farinfrared reflectivity spectrum which is analyzed using a Lorentzian‐oscillator model and the Raman spectrum shows that this compound has a defect structure with disordered vacancies. Modes with A‐symmetry are observed at 86 and 112 cm−1. The semiconducting character is evidenced by electrical studies and the sensitive behavior to normal atmosphere is observed in the electrical conductivity of a sample maintained in air.

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Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of Ga2Te3 Crystals

Julien

Ivanov

Ecrepont

et al. 1994

Phys. Stat. Sol. (a)

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“…Moreover, it is a low cost, simple and versatile technique (Adamiec and Miroslaw 1998). Different variations of ISOVPE in open tube (Shin and Pasko 1984;Piotrowski et al 1987) and closed tube (Bailly et al 1975;Becla et al 1982a) configurations have been utilized by different researchers. The major emphasis is on controlling a number of growth parameters viz.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of Hg1-xCdxTe epitaxial films by isothermal vapour phase epitaxy (ISOVPE)

et al. 2005

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Growth of Hg 1-x Cd x Te epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitance-voltage (C-V) measurements.

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“…They are manufactured using homogeneous composition bulk crystals and epilayers as well. Recent advances in the closed [3] and open tube [4 to 91 isothermal vapour phase epitaxy (IS0 VPE) of Hgl-,Cd,Te makes this method to be one of the most promising for fabrication of low cost, large area, device quality epilayers. Graded gap Hgl _,Cd,Te layers have been successfully used for fabrication of photodiodes [4, ti, 7, 10, 111.…”

Section: Introductionmentioning

confidence: 99%

Influence of dislocations on the performance of 3 to 5 μm Hg1–xCdxTe graded gap photoresistors

Małachowski

Piotrowski

Rogalski

1989

Phys. Stat. Sol. (a)

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Numerical calculations of detectivity of photoresistors made of graded gap n‐type Hg1–xCdxTe structures are carried out. The model involves a generalized approach, taking into account position‐dependent and wavelength‐dependent material parameters, absorption coefficient, band‐to‐band recombination mechanism, and recombination mechanism associated with misfit dislocations present in the graded gap layers. The last mentioned recombination process reduces considerably the carrier lifetime and the photoresistor detectivity what is confirmed by experimental data. This is very probable reason why the failure in fabrication of high performance photoresistors from graded gap Hg1–xCdxTe structures is experienced.

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Isothermal Growth of HgCdTe under Controlled Hg Vapor Pressure

Abstract: not Available.

Cited by 24 publications

References 3 publications

Optical and Electrical Properties of Ga2Te3 Crystals

Optical and Electrical Properties of Ga2Te3 Crystals

Growth and characterization of Hg1-xCdxTe epitaxial films by isothermal vapour phase epitaxy (ISOVPE)

Influence of dislocations on the performance of 3 to 5 μm Hg1–xCdxTe graded gap photoresistors

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