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No abstract

A simple, nondestructive chemical method has been described for the identification of the gallium and arsenic faces of polar <111> normalGaAs . The chemicals used are dilute hydrochloric acid and zinc. The hydrogen gas evolved during the reaction preferentially gathers only on the As surface of {111} normalGaAs and can be used to determine the crystallographic polarity of <111> normalGaAs .

Hg1CdTe (O.18

In this paper Liquid Phase Epitaxial (LPE) growth of Hg1 CdTe from Te-rich solution by dipping technique is briefly discussed. Material parameters like surface morphology, composition and electrical properties of as-grown epilayers are given. These LPE layers have been annealed in Hg atmosphere. The results obtained on Hg diffusion into the epilayers have been discusssed.