Ion beam synthesis of germanium nanostructures

Joshi, Kapil U.; Narsale, A.M.; Kanjilal, D.; Warang, Trupti N.; Gundurao, T.K.; Kothari, D.C.

doi:10.1016/j.surfcoat.2009.02.040

Search citation statements

Order By: Relevance

Paper Sections

Select...

Ion Beam: Synthesis and Modification Of Nanostructure For Mo1

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

2013

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Ge-SiO 2 composite films were characterized using UV-visible and Raman spectroscopy. Micro-Raman spectra showed formation of Ge NPs in SiO 2 [676]. Ge nanoparticles embedded in SiO 2 matrix were prepared by atom beam sputtering on a Si substrate.…”

Section: Ion Beam: Synthesis and Modification Of Nanostructure For Momentioning

confidence: 99%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

252

View full text Add to dashboard Cite

Section: Ion Beam: Synthesis and Modification Of Nanostructure For Momentioning

confidence: 99%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

252

View full text Add to dashboard Cite

“…They have performed optical and electrical characterizations to show the effects of the quantum confinements due to ion bombardments or temperature annealing. Some of them could be seen in Hosono et al (1995), Caldelas et al (2008), Djurabekova et al (2009), Schmidt et al (2007), Rao et al (2007), Wu et al (2002), and Joshi et al (2009).…”

Section: Resultsmentioning

confidence: 97%

Superlattice multinanolayered thin films of SiO₂/SiO₂ + Ge for thermoelectric device applications

Budak

Parker

Smith

et al. 2013

Journal of Intelligent Material Systems and Structures

View full text Add to dashboard Cite

Thermoelectric generators convert heat to electricity. Effective thermoelectric materials and devices have a low thermal conductivity and a high electrical conductivity. The performance of thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and K is the thermal conductivity. We have prepared 100 alternating layers of SiO2/SiO2+ Ge superlattice thin films using ion beam–assisted deposition for the thermoelectric generator device application. The 5 MeV Si ion bombardments were performed using the Center for Irradiation Materials’ Pelletron ion beam accelerator to form quantum dots and/or quantum clusters in the multinanolayer superlattice thin films to decrease the cross-plane thermal conductivity and increase the cross-plane Seebeck coefficient and cross-plane electrical conductivity. The thermoelectric and transport properties have been characterized for SiO2/SiO2+ Ge superlattice thin films.

show abstract

Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis

et al. 2013

View full text Add to dashboard Cite

Ion beam synthesis of germanium nanostructures

Cited by 4 publications

References 9 publications

Ion beam induced surface and interface engineering

Ion beam induced surface and interface engineering

Superlattice multinanolayered thin films of SiO₂/SiO₂ + Ge for thermoelectric device applications

Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis

Contact Info

Product

Resources

About

Ion beam synthesis of germanium nanostructures

Cited by 4 publications

References 9 publications

Ion beam induced surface and interface engineering

Ion beam induced surface and interface engineering

Superlattice multinanolayered thin films of SiO2/SiO2 + Ge for thermoelectric device applications

Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis

Contact Info

Product

Resources

About

Superlattice multinanolayered thin films of SiO₂/SiO₂ + Ge for thermoelectric device applications