Investigations on titanium oxide film as an alternative heat sensitive material

Abstract

In this article, substoichiometric titanium oxide thin films (TiO X ) are prepared with the reactive DC sputtering in an oxygen and argon atmosphere and then annealed in an oxygen atmosphere. Under a set of optimum deposition parameters, TiO X film with sheet resistance value of 167.9 KΩ/□ and TCR value of -3.30%/K obtained. Transmittance of the optimum film is obtained in the 300≤λ≤1100nm wavelength range at room temperature. Thickness, near-infrared absorptance, and other properties of the optimum film are also investigated in this paper.

Atomic layer deposition synthesized TiOx thin films and their application as microbolometer active materials

“…Reddy et al, 14,17 with the same deposition technique but different oxygen content, obtained the TCR value up to 3.66%/K. TiO x films prepared by Jiang et al 13 via reactive DC sputtering showed a TCR value of 3.3%/K. In this work, we introduced low-temperature ALD of TiO x layers together with annealing processes.…”

“…Titanium oxide is a large-band gap semiconductor with significant applications in corrosion-resistant coating, pigment, photocatalysis, solar cells, medical implants, thermal isolation layers, and optical active coatings. [11][12][13] TiO x can be an attractive alternative as bolometric material. Recent research efforts have indicated that TiO x films can appear in different phases based on the deposition and annealing a) Electronic mail: mytanrikulu@adanabtu.edu.tr conditions, and the structural and electrical properties vary greatly under thermal annealing.…”

“…Consequently, the resistivity and temperature coefficient of resistance of titanium oxide films can be changed by many orders of magnitude by varying the deposition and annealing parameters. [13][14][15] There are numerous methods including sol-gel process, chemical vapor deposition, thermal evaporation, and reactive magnetron sputtering that can be used to prepare titanium oxide films. However, there are quite few TCR characterization of TiO x films which are mostly deposited by RF reactive magnetron sputtering as well as DC sputtering.…”

TiO2−x films for bolometer applications: recent progress and perspectives

“…Annealing is a means of metal heat treatment process that mainly heats the metal slowly to a specific temperature for a sufficient time and then cools at a reasonable rate [50]. Thermal annealing of TiO 2−x films is mainly to refine the grain and improve the structure of the films.…”

“…At present, there are few ways to characterize TiO 2−x films by TCR, which are mainly formed by RF reactive magnetron sputtering and DC sputtering deposition [26]. Kwon et al [29] studied reactive sputtering TiO 2−x thin films and obtained TCR values up to 2.8 -%/K Reddy et al [8,23] grew TiO 2−x films under the same deposition technique but different oxygen content, the TCR value was 3.66 −%/K Jiang et al reported the TCR of TiO 2−x thin film prepared by reactive DC sputtering method was 3.3 −%/K [50]. The substrate was fixed to the deposition chamber after cleaning, and ALD treatment was started.…”