In this paper, we systematically investigated tailoring bolometric properties of a proposed heat-sensitive TiOx/Ti/TiOx tri-layer film for a waveguide-based bolometer, which can play a significant role as an on-chip detector operating in the mid-infrared wavelength range for the integrated optical gas sensors on Ge-on-insulator (Ge-OI) platform. As a proof-of-concept, bolometric test devices with a TiOx single-layer and TiOx/Ti/TiOx tri-layer films were fabricated by varying the layer thickness and thermal treatment condition. Comprehensive characterization was examined by the scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses in the prepared films to fully understand the microstructure and interfacial properties and the effects of thermal treatment. Quantitative measurements of the temperature- and time-dependent resistance variations were conducted to deduce the minimum detectable change in temperature (ΔTmin) of the prepared films. Furthermore, based on these experimentally obtained results, limit-of-detection (LoD) for the carbon dioxide gas sensing was estimated to demonstrate the feasibility of the proposed waveguide-based bolometer with the TiOx/Ti/TiOx tri-layer film as an on-chip detector on the Ge-OI platform. It was found that the LoD can reach ∼3.25 ppm and/or even lower with the ΔTmin of 11.64 mK in the device with the TiOx/Ti/TiOx (47/6/47 nm) tri-layer film vacuum-annealed at 400 °C for 15 min, which shows great enhancement of ∼7.7 times lower value compared to the best case of TiOx single-layer films. Our theoretical and experimental demonstration for tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film provides fairly useful insight on how to improve LoD in the integrated optical gas sensor with the bolometer as an on-chip detector.
