The bolometer is widely used in military and civilian infrared imaging due to its advantages of non-cooling, small size and portability. Thermosensitive materials seriously affect the performance of bolometers. As a kind of heat-sensitive material, the TiO2-x material has the advantages of good thermal stability, large-area preparation, and compatibility with the complementary metal-oxide semiconductor (CMOS) process. However, there is almost no review on the application of titanium oxide for bolometers. In this paper, we introduce the bolometer's main thermal and photoelectric performance parameters and the critical technologies to manufacture the bolometer. Finally, we will particularly emphasize the effects of preparation process parameters of TiO2 on the performance parameters temperature coefficient of resistance (TCR), 1/f noise, etc., were studied.
Two-dimensional tungsten disulfide (WS 2 ), as one of the widely concerned members of the transition metal dichalcogenides family, has been studied broadly by its outstanding photonic and electronic properties. Since all of the research works focus on size and the number of layers, the dendritic structure WS 2 has been scarcely reported. In our study, we make use of atmospheric pressure chemical vapor deposition (APCVD) to control the synthesis of dendritic WS 2 /monolayer WS 2 heterostructures on the SiO 2 /Si substrate. The stacking morphology of the heterostructure is verified by AFM, Raman, and PL spectra. The effects of growth times and carrier gas flux on the quasiepitaxial growth of WS 2 films with dendritic structures have been systematically studied. In addition, the transition between fractal, dendritic, and compact morphologies with the increase of the growth times (carrier gas flux) are more significant. The compact morphology and difference of contact potential between the adjacent dendritic structures are characterized by Kelvin probe force microscopy (KPFM). Moreover, the as-fabricated FET devices exhibit excellent electronic properties (on/off ratio, carrier mobility, photoresponsivity, and response time are about 10 6 , 11.42 cm 2 V −1 S 1− , 46.6 mA/W, and 105.5 μs, respectively). This study paves the way for the rational design of high-sensitivity fractal-enhanced phototransistor devices for industrial and commercial applications.
In general, the growth rate of lead sulfide (PbS) crystals in the solution is fast, and it is difficult to obtain nanosized structure films without the presence of inhibitors. Herein, highly crystalline 1D single‐crystal PbS nanorods array on the graphene substrate is prepared in the solution containing a high‐concentration sulfur ion as the inhibitors by electrochemical atomic layer epitaxy (ECALE) method. Meanwhile, the diameter of the PbS array from micrometers to nanometers can be controlled by adjusting the ratio of lead and sulfur. Through polarization studies on graphene substrates, the critical role of Au–thiolate in the vertical growth of PbS nanorod is controlled. Finally, the PbS array–graphene heterostructure photodetector presents an extraordinary photoresponsivity in 1.55 μm at room temperature.
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