1976
DOI: 10.1002/pssa.2210360118
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Investigations of growth defects in solution-grown GaxIn1−xP with a SEM operating in the cathodoluminescence mode

Abstract: Characteristic defect structures in GaxIn1−xP are observed with the cathodoluminescence mode of a scanning electron microscope (SEM). The crystals are grown from In‐rich solutions by a modified Bridgman technique. The growth defects are interpreted as a cellular structure produced by instabilities of the phase boundary. Theoretical considerations support this interpretation.

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Cited by 16 publications
(2 citation statements)
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“…The Inl-,Ga,P (z 2 0.77) samples were always polycrystals grown from a non-stoichiometric melt [8]. The composition was determined by microprobe analysis.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The Inl-,Ga,P (z 2 0.77) samples were always polycrystals grown from a non-stoichiometric melt [8]. The composition was determined by microprobe analysis.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Inl-,Ga,P mixed crystals as well as the pure end-member crystals I n P and GaP were grown from the non-stoichiometric melt by a modified Bridgman method described by Voigt et al, [19]. Slices with thicknesses varying from 0.1 to 0.5 mm (depending on composition x) were cut from the boules and mechanically polished.…”
Section: Samples and Apparatusmentioning
confidence: 99%