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In industry, filamentous fungi have a prominent position as producers of economically relevant primary or secondary metabolites. Particularly, the advent of genetic engineering of filamentous fungi has led to a growing number of molecular tools to adopt filamentous fungi for biotechnical applications. Here, we summarize recent developments in fungal biology, where fungal host systems were genetically manipulated for optimal industrial applications. Firstly, available inducible promoter systems depending on carbon sources are mentioned together with various adaptations of the Tet-Off and Tet-On systems for use in different industrial fungal host systems. Subsequently, we summarize representative examples, where diverse expression systems were used for the production of heterologous products, including proteins from mammalian systems. In addition, the progressing usage of genomics and functional genomics data for strain improvement strategies are addressed, for the identification of biosynthesis genes and their related metabolic pathways. Functional genomic data are further used to decipher genomic differences between wild-type and high-production strains, in order to optimize endogenous metabolic pathways that lead to the synthesis of pharmaceutically relevant end products. Lastly, we discuss how molecular data sets can be used to modify products for optimized applications.

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The advantages of the wavelength-modulation technique (1) a r e used here to in-Ga P mixed crystals and vestigate the weak structures in the indirect edge of In to observe the direct-indirect transition directly ~ because the corresponding x-value

Manganese and donor‐acceptor luminescence in ZnSe is investigated by optically detected magnetic resonance (Odmr). Resonances due to the Mn2+ ground state are observed not only in the 4T1 → 6A1 emission band of Mn2+ but in two donor‐acceptor recombination bands. Possible mechanisms for the transfer of the ground state resonance to the excited states are discussed. Cross relaxation is the most probable effect. Moreover, spin memory manifests itself in the influence of the excitation polarization on ODMR signals.