Investigation of ZnmCdnXy (y = m + n; X = Te, Se and S) Clusters with TDDFT Method

Wang, Chunlei; Xu, Shuhong; Ye, Lihua; Lei, Wei; Cui, Yiping

doi:10.1007/s10876-011-0353-y

Cited by 60 publications

(77 citation statements)

References 38 publications

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“…24 The degree of linear polarization is similar to previously reported values for nanotubes 25 and wires. 3 The total QE of the resonant QD photocurrent ranges from 3 ϫ 10 −5 ͑perpendicular polarization͒ to 2 ϫ 10 −4 ͑parallel polarization͒. We note that by assuming total absorption for the QD cross section, we underestimate the QE.…”

mentioning

confidence: 86%

“…2 In addition, NW devices have shown excellent light detection properties. [3][4][5][6] Recently, quantum dots ͑QDs͒ embedded in NW devices have shown both single electron control [7][8][9][10] and single photon emission, 11 which are important in quantum information applications. The unique combination of an on-chip light emitter and detector is useful for near field optical circuits using plasmon waveguides.…”

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confidence: 99%

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Single quantum dot nanowire photodetectors

Kouwen

Weert

Reimer

et al. 2010

Applied Physics Letters

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mentioning

confidence: 86%

mentioning

confidence: 99%

Single quantum dot nanowire photodetectors

Kouwen

Weert

Reimer

et al. 2010

Applied Physics Letters

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“…Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties. Indium phosphide (InP) nanowires (NWs) have attracted an increasing amount of attention because of their extensive use in electronics, 1 optoelectronics, 2,3 and photovoltaics, [4][5][6] and both axial 7,8 and core-shell 9 heterostructures have been developed for new advanced nanoscale devices. However, most NWs reported are grown in the direction perpendicular to that of the close-packed planes in the crystal structure, i.e., in the h111i direction for zincblende (ZB) or the h0001i direction for wurtzite (WZ), in which the NWs commonly have planar stacking faults (SFs), leading to a faulted crystal or even a mixture of ZB/WZ crystal structures.…”

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confidence: 99%

Position-controlled [100] InP nanowire arrays

Wang

Plissard

Hocevar

et al. 2012

Applied Physics Letters

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“…Individual semiconductor nanowires have been employed in nanoscale optoelectronic devices, such as electrically driven lasers, 1 lightemitting diodes, 2 and photodetectors, 3 among other applications. 4 A fundamental understanding of electronphonon interaction within nanowires is required to tailor their optical and electrical properties 5 and could further the development of nanowire electronic devices.…”

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confidence: 99%

Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

et al. 2009

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The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E g . Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phononscattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at E g , allowing for the development and optimization of nanowire optoelectronic devices. DOI: 10.1103/PhysRevB.80.201314 PACS number͑s͒: 63.22.Gh, 63.20.kd, 71.35.Ϫy, 78.30.Fs Nanowires are quasi-one-dimensional crystals that can exhibit radial quantum confinement, resulting in nanoscale properties different from those of the bulk. Individual semiconductor nanowires have been employed in nanoscale optoelectronic devices, such as electrically driven lasers, 1 lightemitting diodes, 2 and photodetectors, 3 among other applications. 4 A fundamental understanding of electronphonon interaction within nanowires is required to tailor their optical and electrical properties 5 and could further the development of nanowire electronic devices. For example, photoluminescence peak broadening is largely attributed to the coupling of electronic charge to phonons, 6 which can inhibit the ability to spectrally distinguish individual photons; further, phonon coupling to the electron of a bound exciton could drastically affect optoelectronic properties in nanowire devices, especially in regimes of strong quantum confinement. 7,8Fröhlich-induced electron-phonon coupling in assemblies of nanowires has been previously investigated under nonresonance conditions. 9,10 However, a disparity in growth directions, size, and structure of nanowires within an assembly can result in averaged spectral data hindering information on a single-nanowire level. Resonant Raman spectroscopy is sensitive to structural variations of individual nano-objects within a population, 11 but no resonant Raman studies on individual nanowires have been reported to date. Here, we study individual nanowires by resonant micro-Raman spectroscopy near the energy bandgap E g to understand electronphonon coupling and exciton scattering in quasi-onedimensional systems. Notably, previous attempts have been hampered by excessive photoluminescence ͑PL͒.12 A model is presented for two-phonon excitonic scattering, which fits well with the observed 2LO resonance intensities from a single GaAs nanowire and allows us to assess the Fröhlich coupling strength and the exciton damping constant.GaAs nanowires were grown using metalorganic chemical vapor deposition catalyzed by 90 nm Au nanoparticles, as reported previously.13 Nanowire structural properties were investigated using a JEOL 6320FV high-resolution scanning electron microscope ͑SEM͒ and by JEOL 2010F fieldemission transmission electron microscope ͑TEM͒. For Raman experiments, nanowires were removed from the growth substrates by so...

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Investigation of ZnmCdnXy (y = m + n; X = Te, Se and S) Clusters with TDDFT Method

Cited by 60 publications

References 38 publications

Single quantum dot nanowire photodetectors

Single quantum dot nanowire photodetectors

Position-controlled [100] InP nanowire arrays

Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

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