We report on remote p-type doping of InAs nanowires by a p-doped InP shell grown epitaxially on the core nanowire. This approach addresses the challenge of obtaining quantitative control of doping levels in nanowires grown by the vapor-liquid-solid (VLS) mechanism. Remote doping of III-V nanowires is demonstrated here with the InAs/InP system. It is especially challenging to make p-type InAs wires because of Fermi level pinning around 0.1 eV above the conduction band. We demonstrate that shielding with a p-doped InP shell compensates for the built-in potential and donates free holes to the InAs core. Moreover, the off-current in field-effect devices can be reduced up to 6 orders of magnitude. The effect of shielding critically depends on the thickness of the InP capping layer and the dopant concentration in the shell.
Flue instruments such as the recorder flute and the transverse flute have different mouth geometries and acoustical response. The effect of the mouth geometry is studied by considering the aeroacoustical response of a simple whistle. The labium of a transverse flute has a large edge angle (60 degrees) compared to that of a recorder flute (15 degrees). Furthermore, the ratio W/h of the mouth width W to the jet thickness h can be varied in the transverse flute (lips of the musician) while it is fixed to a value W/h approximately 4 in a recorder flute. A systematic experimental study of the steady oscillation behavior has been carried out. Results of acoustical pressure measurements and flow visualization are presented. The sharp edge of the recorder provides a sound source which is rich in harmonics at the cost of stability. The larger angle of the labium of the flute seems to be motivated by a better stability of the oscillations for thick jets but could also be motivated by a reduction of broadband turbulence noise. We propose two simplified sound source models which could be used for sound synthesis: a jet-drive model for W/h>2 and a discrete-vortex model for W/h<2.
An expanding thermal argon plasma into which oxygen is injected has been analysed by means of Langmuir and Pitot probe measurements. Information is obtained on the ion density profile and the flow pattern in the downstream plasma. A combination of Langmuir and Pitot probe measurements provide information on the total ion flux generated by the plasma source (cascaded arc). It has been found that the ion diffusion is mainly determined by the background pressure in the expansion vessel and the arc current. The ion density is determined by the total power input into the plasma as well as the gas flow in the plasma source. There is an optimum in the power transfer used for ionization from plasma source to the feed gas. Interaction of oxygen with the plasma results in a decrease in the argon ion density and the plasma beam radius. The recirculation pattern of the downstream plasma has been investigated experimentally using the Pitot probe. Due to the low downstream pressure (10-30 Pa), the conventional compressible Pitot probe theory no longer applies. It is concluded that viscous effects start to play an important role at these low pressures and should be taken into account in the analysis of the Pitot probe measurements.
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