Majoranas Arrive When a negatively charged electron meets a positron—its positively charged antiparticle—they annihilate each other in a flash of gamma rays. A Majorana fermion, on the other hand, is a neutral particle, which is its own antiparticle. No sightings of a Majorana have been reported in the elementary particle world, but recently they have been proposed to exist in solid-state systems and suggested to be of interest as a quantum computing platform. Mourik et al. (p. 1003 , published online 12 April; see the cover; see the Perspective by Brouwer ) set up a semiconductor nanowire contacted on each end by a normal and a superconducting electrode that revealed evidence of Majorana fermions.

Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlettriplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbit effective field in an InSb nanowire double dot. The obtained results are confirmed using spin blockade leakage current anisotropy and transport spectroscopy of individual quantum dots.PACS numbers: 73.63. Kv, 85.35.Be The spin-orbit interaction (SOI) describes coupling between the motion of an electron and its spin. In one dimension, where electrons can move only to the left or to the right, the SOI couples this left or right motion to either spin-up or spin-down. An extreme situation occurs in what is called a helical liquid [1] where, in the presence of magnetic field, all spin-up electrons move to the left and all spin-down electrons to the right. As proposed recently [2,3], a helical liquid in proximity to a superconductor can generate Majorana fermions [4]. The search for Majorana fermions in 1D conductors is focused on finding the best material in terms of a strong spin-orbit interaction and large Landé g-factors. The latter is required for a helical liquid to exist at magnetic fields that do not suppress superconductivity. High g-factors of the order 50, strong SOI and the ability to induce superconductivity put forward InSb nanowires [5,6] as a natural platform for the realization of 1D topological states.The SOI can be expressed as an effective magnetic field B SO that depends on the electron momentum. An electron moving through the wire undergoes spin precession around B SO with a π rotation over a distance l SO called the spin-orbit length (see Fig. 1(a)). The length l SO is a direct measure of the SOI strength: a stronger SOI results in a shorter l SO . In this letter, we use spin spectra of single electrons in quantum dots [7] to extract l SO and the direction of B SO . In quantum dots, the SOI hybridizes states with different spin [5,8,9]. For a single electron, the SOI-hybridized spin-up and spin-down states form a spin-orbit qubit [10,11]. For two electrons SOI hybridization induces level repulsion between singlet and triplet states. The resulting level-repulsion gap between the well-defined qubit states can be used to measure the SOI: the gap size is determined by l SO [5,8,9] and the gap anisotropy indicates the direction of B SO [12][13][14]. Double quantum dots in InSb nanowires are defined by local gating (Figs. 1(b),1(c)). A finite voltage is applied across the source and drain electrodes; and the current through the nanowire is measured. Five gates underneath the wire create the confinement potential and control the electron number on the two dots [9,15]. We focus on the (1,1) charge configuration ( Fig. 1(d)), in which both the left and the right dot contain exactly one electron, each of them...

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality.

We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.