Investigation of the transmitter susceptibility to reverse intermodulation by the use of double-frequency diagrams

Sinkevich, Eugene; Mordachev, Vladimir

doi:10.1109/isemc.2015.7256333

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…In the second case, when Ψ 1 = Ψ 2 we become interested only in the amplitude of the RIMD components, as there is, in general, no phase relationship between the tones. It has been shown that RIMD is a function of odd-order harmonics [1] in addition to being dependent on the technology [8] and topology [9] of the PA. There are indications this RIMD mechanism applies to GaN, CMOS and GaAs based PAs [10]- [13].…”

Section: Analysis Of Reverse Imdmentioning

confidence: 99%

“…Reverse Intermodulation Distortion (RIMD) occurs when signals from one transmitter couple to the output ports of nearby TXs and vice-versa, with the coupling strength being dependent on the type of elements used, their spacing and polarization. These reverse travelling signals mix in the output stage with the carrier frequency of the victim's PA, producing intermodulation components akin to regular intermodulation distortion (IMD) [1], as illustrated in Figure 1, where Ψ 1 and Ψ 2 are two distinct frequencies, both within the bandwidth of the PA. This phenomenon is becoming increasingly relevant in high density and high linearity systems such as radar and 5G.…”

Section: Introductionmentioning

confidence: 99%

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Reverse Intermodulation in Multi-Tone Array Transmitters

Atanasov

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Vliet

2020

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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The modern spectral, and thereby linearity, requirements force 5G phased-array transmitter systems to operate at reduced power efficiency, as they can no longer use voluminous filtering. To reduce the linearity requirements of the transmitter, we consider the case of an array consisting of closely spaced radiating elements operating at different frequencies.The coupled tones from one element to another create reverse intermodulation distortion (RIMD). We explain how RIMD is created within a power amplifier (PA), and derive an estimate for the power of the RIMD components. We provide a set of measurements for an X-Band GaAs PA and draw a direct comparison between RIMD and IMD. We show that RIMD has a third-order behaviour up to very high reverse power levels, opening up the perspective for higher output power operation as well as simpler and lower-power predistortion in multi-tone array systems such as 5G and radar.

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