Investigation of the low-temperature CL contrasts of dislocations in compound semiconductors

Identification of the 0.95 eV luminescence band in n-type GaAs:Si

“…From a least squares fit of the experimental data, the E for the different luminescence bands were obtained and they are almost the same (see figure 4(a)). In addition to the possible increase in competition from nonradiative transitions with temperature [21], the decrease in the number of electron-hole pairs available for radiative recombinations in unit volume due to an enhanced thermal activation may reduce the CL intensity of the bands. As a matter of fact, if we assume that the radiative recombination passing through a path involves at least one trap in the band gap which captures an electron or a hole, E can be understood as the energy level of the trap lying below the conduction band or above the valence band or the activation energy for nonradiative relaxation processes on the basis of the configurational coordinate model [6,8].…”

Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride

“…2). In a recent work [13], we have called this feature Dislocation Luminescence (DL). This DL emission band is found to be fully localized at the bright dislocation branches and is not detected either in the neighbouring dark contrast branch or m the undeformed matrix area.…”

Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature

“…This image reveals the columnar structure of the GaN. Generally, dislocations cause dark contrast in the CL images because they act as nonradiative recombination centers [13]. As a result, we have tentatively assigned the vertical dark lines in the figure to TDs in GaN.…”