Identification of the 0.95 eV luminescence band in n-type GaAs:Si

Abstract

The luminescence band at 0.95 eV has been identified as originating from the transition within (SiGaVGaSiGa) complexes by comparing cathodoluminescence and positron annihilation spectra. The upper and lower energy levels of the molecule-like defect complexes are suggested to lie at 22 meV below the conduction band and at about 0.5 eV above the valence band, respectively.

Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique

“…Beyond an electron concentration of about 1 Â 10 18 cm À3 the former one vanishes completely. In contradiction to the results published so far [17][18][19][20][21], we assign the 0.95 eV band to the (V Ga Si Ga ) 2À and the 1.15 eV transition to the (Si Ga V Ga Si Ga ) À complex. Detailed arguments will be published elsewhere [34].…”

“…Studies on the influence of boron on vacancy concentrations show that boron decreases the concentration of Ga vacancies (V Ga ) [15,16]. Isolated vacancies form (donor-V Ga ) complexes due to Coulomb interaction and its concentration relates to the intensity of luminescence bands at 0.95 and 1.15 eV [17][18][19][20][21]. In this study, we present experimental data on the dependence of the formation of these compensating (donor-V Ga ) complexes on Si doping.…”

Progress to a Gallium-Arsenide Deep-Center Laser

“…Though these deep-acceptors have been known since the 1960s [8,11,12,13,14,15,16,17,18], this material is novel because n-type GaAs is not usually designed to retain large concentrations of compensating acceptors. These compensating acceptors are [8,11,19,20,21,22,23] donor-vacancy-on-gallium complexes (donor-V${}_{\text{Ga}}$ complexes, e.g., V${}_{\text{Ga}}$, Si${}_{\text{Ga}}$-V${}_{\text{Ga}}$, Si${}_{\text{Ga}}$-V${}_{\text{Ga}}$-Si${}_{\text{Ga}}$, etc., where Si${}_{\text{Ga}}$ denotes the silicon-on-gallium-site).…”

Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition

“…4(a), the PL spectrum of sample B annealed at 560 1C showed a relatively large PL intensity around 1200 nm. These emissions can be attributed to the Si-related complexes in the Si-doped GaAs substrates used in the study [21]. We find that whenever the QD material is of poor quality, such emissions would appear in the PL spectra.…”