Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique

Origins of ductile plasticity in a polycrystalline gallium arsenide during scratching: MD simulation study

“…https://doi.org/10.1016/j.apsusc.2021.149489 3 where they outbid silicon devices [2]. GaAs can be grown as a single crystal using methods such as the vertical gradient freeze method, the Bridgman-Stockbarger technique, or the Liquid encapsulated Czochralski growth process [3] [4]. Parallel to this, the films of polycrystalline GaAs can be grown by chemical vapour deposition (by annealing an amorphously grown film) [5], or by using molecular beam epitaxy (MBE) [6].…”

Boron‐ and stoichiometry‐related defect engineering during B2O3‐free GaAs crystal growth

“…At last, it is worth mentioning that a significant difference in mobility in n-type GaAs:Si crystals with low and high boron contamination cannot be observed [26]. The electron mobility decreases in both types of samples with increasing electron concentration, even though a tendency of higher mobilities in boron-reduced GaAs crystals may be inferred.…”

Nonlinear model-based control of the Czochralski process II: Reconstruction of crystal radius and growth rate from the weighing signal

“…3. Both refer to Czochralski growth without a boron oxide layer [30]. In the simulation the results of which can be found on the left hand side of the figure the observer starts with a wrong initial radius and a wrong initial slope angle.…”