Investigation of single-event damages on silicon carbide (SiC) power MOSFETs

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

“…At normal incidence, the area is simply . At tilted angles the collected charge is projected to the anode within an area of (2) or simply, . The charge collection area basically determines the current density and therefore the power density due to Joule heating.…”

“…The silicon power devices typically exhibit separate regions of destructive and nondestructive response as a function of voltage [4], [5]. In addition to these two regions, SiC Schottky devices have been reported to exhibit also a third region where devices suffer from gradual degradation under heavy-ion exposure [2], [6], [7]. This gradual degradation complicates the assessment of SiC parts for catastrophic failures like Single Event Burnout (SEB).…”

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

“…The schematic model, depicted in Figure 6, could be used in circuit simulations by applying Eqs. (1) and (2) in it, to estimate overall systems' response under ion exposure for space applications. The parameters 8 and / , obtained for Eq.…”

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

“…In addition, efficient Schottky switching diodes in SiC can be manufactured that exhibit very low on-state voltage and minimal turn-off switching loss with almost no reverserecovery behavior, which makes SiC a good candidate for space power conversion applications. However, the sensitivity of SiC power devices (MOSFETs and diodes) to particle radiation has been found to be higher than expected, given the wide bandgap and high critical electric field, as shown by multiple researchers who have consistently measured significant leakage current increases and single-event burnout in SiC devices [1][2][3][4][5][6][7][8][9][10][11].…”

“…There are several examples of SiC power diode SEB in the literature [1][2][3][4][5][6][7]. SiC diodes show three regions of response as a function of reverse bias and the parameters of heavy-ion exposure: 1) non-destructive; 2) gradual degradation; and 3) catastrophic failure through Single Event Burnout (SEB).…”