Investigation of significantly high barrier height in Cu/GaN Schottky diode

Garg, Mansi; Kumar, Ashutosh; Nagarajan, S.; Sopanen, Markku; Singh, Rajendra

doi:10.1063/1.4939936

Cited by 35 publications

(25 citation statements)

References 34 publications

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“…In other words, the decrease in Φ B0 and the increase in n with decreasing temperatures are also evidence that the termionic field emission (TFE) at an intermediate temperature or field emission (FE) at a low temperature is possibly the other current-transport mechanisms. 15,26 It is clear that the values of Φ B0 increase with increasing temperature for the as-deposited and annealed SCs and that is also in agreement with what is reported for the negative temperature coefficient of the bandgap of the semiconductor or ideal diode. This result shows that the current-conduction mechanism in the as-deposited and annealed (Ni/Pt) SCs on AlInGaN quaternary alloy deviates considerably from the pure TE theory especially at low temperature.…”

Section: T (K)supporting

confidence: 87%

“…The changes in both n and Φ B0 with temperature for the SCs on the semiconductor materials could be associated with the existence of a spatial inhomogeneity in the BHs that consists extensively of lower and higher barriers or patches with different areas. [17][18][19][20][21][22][23][24][25][26][27]23,24,35 In other words, current can preferentially flow through the lower BH or patches and lead to an important increase in n value.…”

Section: Resultsmentioning

confidence: 99%

“…[19][20][21] In other words, at low temperatures, electrons or holes do not have enough energy to pass through the top of SBH, but they can be passed through lower barriers/patches at around mean SBH and that leads to an increase in the current and so n. However, at high temperatures, they gain more and more energy to pass the top of SBH. [25][26][27] Many researchers have also reported that the thermal annealing affects the electrical properties of Schottky contacts. [28][29][30][31][32][33][34][35] Khanna et al 31 showed that the SBH (0.65 eV) of the W 2 B 5 -based rectifying contacts on the n-GaN layer increased with an annealing temperature up to 200°C.…”

Section: Introductionmentioning

confidence: 99%

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Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Arslan

Altındal

Ural

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The current-conduction mechanisms of the as-deposited and annealed at 450°C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80-320 K. The zero-bias barrier height (BH) (Φ B0) and ideality factor (n) of them were evaluated using thermionic emission (TE) theory. The Φ B0 and n values calculated from the I-V characteristics show a strong temperature dependence. Such behavior of Φ B0 and n is attributed to Schottky barrier inhomogeneities. Therefore, both the Φ B0 vs n and Φ B0 vs q/2kT plots were drawn to obtain evidence on the Gaussian distribution (GD) of the barrier height at the metal/semiconductor interface. These plots show two different linear parts at low and intermediate temperatures for as-deposited and annealed Schottky contacts. Thus, the mean value of Φ B0 and standard deviation (σ 0) was calculated from the linear parts of the Φ B0 vs q/kT plots for both samples. The values of the effective Richardson constant (A Ã) and mean BH were obtained from the modified Richardson plots which included the effect of barrier inhomogeneity. These values of Richardson constant and barrier height for as-deposited contacts were found to be 19.9 A cm −2 K −2 and 0.59 eV, respectively, at low temperature, but 43.3 A cm −2 K −2 and 1.32 eV, respectively, at intermediate temperatures. These values of Richardson constant and barrier height for annealed contacts were found to be 19.6 A cm −2 K −2 and 0.37 eV, respectively, at low temperature, but 42.9 A cm −2 K −2 and 1.54 eV, respectively, at intermediate temperatures. It is clear that the value of the Richardson constant obtained for as-deposited and annealed samples by using double-GD for intermediate temperatures is close to the theoretical value of AlInGaN (=44.7 A cm −2 K −2). Therefore, I-V-T characteristics for the as-deposited and annealed Schottky contacts in the temperature range of 80-320 K can be successfully explained based on TE theory with double-GD of the BHs.

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Section: T (K)supporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Arslan

Altındal

Ural

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The XPS results showing small peaks at 943.2 and 962.4 eV which may be ascribed to 3d 9 shell of the Cu ions, which suggest the presence of a small concentration of oxides of copper and is inconsistent with the XRD results. [35,36]…”

Section: ¼ Kl Bcosqmentioning

confidence: 99%

Colorimetric Sensing of Hydrogen Peroxide Using Ionic‐Liquid‐Sensitized Zero‐Valent Copper Nanoparticle (nZVCu)

et al. 2020

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In this study, a stable ionic liquid (IL) mediated zero-valent copper nanoparticle (nZVCu), namely IL-nZVCu, has been evaluated for catalytic properties towards H 2 O 2 -mediated TMB (3, 3',5,5'-tetramethylbenzidine) reaction under normal conditions of temperature and pH. The various analytical techniques like Fourier Transform Infrared Spectroscopy (FT-IR), UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS), X-ray powder diffraction (XRD), scanning electron microscope (SEM), Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to confirm the structure and nano size of nZVCu. The simple protic IL 1-hydrogen-3-methylimidazolium acetate (HmimOAc) with its cation 1-methylimidazole and anion acetate was synthesized, characterized, and coated on nZVCu to prepared IL-nZVCu. As a novel mimic peroxidase, IL-nZVCu could quickly catalyze the oxidation reaction of specific chromogenic substrate TMB, when H 2 O 2 acts as an oxidant, followed by a remarkable color change in the solution measured by UV/Vis Spectrophotometry. The enhanced catalytic activity and significant color change were greatly dependent on the catalyst dosage, the volume of IL taken, incubation time, H 2 O 2 concentration, and TMB concentration. Also, IL-nZVCu showed no response toward ascorbic acid, cholesterol, dopamine, urea and uric acid. Based on these findings, IL-nZVCu could be effectively used for visual colorimetric sensing of H 2 O 2 with a limit of detection (LOD) of 44 μM over the dynamic linear range from 40 μM to 1000 μM concentration.

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“…As a consequence, the Fermi level of the semiconductor gets pinned relative to the band edges and the Schottky barrier height (SBH) becomes nearly constant irrespective of the metal on the other side, violating the Schottky-Mott rule (/ Bn ¼ / m À v s ). [4][5][6][7][8] The large concentration of defects on the surface of GaN also results in tunnelling of carriers in the forward bias and large leakage current in reverse biased Schottky barrier diodes (SBDs), [9][10][11] degrading the device performance and reliability.…”

mentioning

confidence: 99%

Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

Garg

Naik

Pathak

et al. 2018

Applied Physics Letters

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III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, we have demonstrated the use of a Self-Assembled Monolayer (SAM) of organic molecules to improve the electrical characteristics of Schottky barrier diodes (SBDs) on n-type Gallium Nitride (n-GaN) epitaxial films. The electrical characteristics of diodes were improved by adsorption of SAM of hydroxyl-phenyl metallated porphyrin organic molecules (Zn-TPPOH) onto the surface of n-GaN. SAM-semiconductor bonding via native oxide on the n-GaN surface was confirmed using X-ray photoelectron spectroscopy measurements. Surface morphology and surface electronic properties were characterized using atomic force microscopy and Kelvin probe force microscopy. Current-voltage characteristics of different metal (Cu, Ni) SBDs on bare n-GaN were compared with those of Cu/Zn-TPPOH/n-GaN and Ni/Zn-TPPOH/n-GaN SBDs. It was found that due to the molecular monolayer, the surface potential of n-GaN was decreased by $350 mV. This caused an increase in the Schottky barrier height of Cu and Ni SBDs from 1.13 eV to 1.38 eV and 1.07 eV to 1.22 eV, respectively. In addition to this, the reverse bias leakage current was reduced by 3-4 orders of magnitude for both Cu and Ni SBDs. Such a significant improvement in the electrical performance of the diodes can be very useful for better device functioning.

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Investigation of significantly high barrier height in Cu/GaN Schottky diode

Cited by 35 publications

References 34 publications

Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Colorimetric Sensing of Hydrogen Peroxide Using Ionic‐Liquid‐Sensitized Zero‐Valent Copper Nanoparticle (nZVCu)

Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

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