Investigation of short time donor annihilation in silicon

O’Mara, William C.; Parker, Julia; Butler, Paul; Gat, A.

doi:10.1063/1.95665

Cited by 19 publications

(6 citation statements)

References 7 publications

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“…The same value is found for p-type material. It corresponds to the results of other investigations of the donor annihilation between 550 and 650 "C [5], differs, however, from En, = 2.7 eV given by Fuller and Logan [3] for annihilation experiments between 515 and 590 "C.…”

Section: (2)supporting

confidence: 81%

“…Annealing at temperatures between 550 and 650 "C reduces the concentration of OD2's. The activation energy for their annihilation is determined to be E,, = 1.7eV [5], which equals that for the growth of TD1 to TD9. Therefore, similar diffusion-controlled processes are presumed for the growth of T D s and the annihilation of OD2's.…”

Section: Od1 and Od2 Us T H R D Donorsmentioning

confidence: 99%

“…Moreover, OD2's lead to an increase of the annealing time at 650 "C to annihilate thermal donors. While annealing for about 1 s is suffcieht to annihilate T D s in as-grown material [5], 10 to 15 min are necessary for material preannealed at 450 "C.…”

Section: Od1 and Od2 Us T H R D Donorsmentioning

confidence: 99%

“…In recent years different oxygen-related donors (OD) have been observed to result from the annealing of Czochralski-grown silicon. It is well-known that annealing in the range of 350 to 500°C introduces thermal donors (TD) [l to 41, which are annihilated by an additional annealing at temperatures above 500°C [3,5]. Besides the TD's, further oxygen-related donor complexes arise during annealing a t temperatures higher than 550 "C [6 to 121.…”

Section: Introductionmentioning

confidence: 99%

“…The interpretation of a continuous transformation of donors from OD1 to OD4 is also based on an equivalent activation energy of E, = (1.7 f 0.2) eV. The energy is observed for the formation of TDs (TDl to TD9), for the annihilation of TDs induced by short[5] and extended preannealing treatments as well as for the formation of new donors. The processes, which are characterized by this energy, have not yet been explained.…”

mentioning

confidence: 99%

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Formation of new donors in Cz-grown silicon at temperatures below 500°C

Reichel

Reiche²,

Zuber

1990

phys. stat. sol. (a)

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The formation of oxygen-related donors (OD) at temperatures TI < 500 "C are investigated as well as their annihilation or growth by subsequent annealing at Tt > 550 "C. There is a time-dependent variation of the concentration of ODs for annealing at Tl for up to lo00 h, which can be arranged into three consecutive stages: Besides the known (i) increase up to a maximum value and (ii) following reduction, (iii) further annealing causes a level of the donor concentration which does only slightly differ over longer times. Furthermore, samples, preannealed at Tl corresponding to these stages, are subsequently annealed at T'. Here, due to their different annihilation behaviour four different oxygen related donors, i.e. OD1 to OD4, are distinguished, which are formed during annealing at Tl. Donors OD1 and OD2 are interpreted to be the thermal donors already known. On the other hand, OD3 is annihilated first at 750 "C, while OD4 is stable also during annealing at 850 "C. Following this, OD4 is regarded as a new donor (ND). This means, that besides annealing at T2, also extended annealing at temperatures below 500 "C (Ti) results in the formation of ND's. Die Bildung sauerstoffbedingter Donatoren (OD) bei Temperaturen Tl < 500 "C und deren Annihilation oder Wachstum bei nachfolgenden Temperungen bei T ' > 550 "C wird untersucht. Es existiert eine zeitabhangige OD-Konzentration fiir Temperungen Tl bis zu lo00 Stunden. Es kiinnen drei aufeinanderfolgende Bereiche unterschieden werden: Neben dem bereits bekannten (i) Ansteigen bis zu einem Maximum und (ii) nachfolgender Vemngerung (iii) wird bei weiterem Tempern ein Niveau der Donatorkonzentration erreicht, das uber lange Zeiten wenig geiindert wird. Bei Tl vorgetemperte Proben, die diesen Bereichen zugeordnet werden kiinnen, werden nachfolgenden Temperungen bei T2unterworfen. Auf Grund des unterschiedlichen Ausheilverhaltens werden vier verschiedene sauerstoffbedingte Donatoren OD1 bis OD4 unterschieden, die bereits bei Tl gebildet wurden. OD1 and OD2 werden als bereits bekannte Thermodonatoren interpretiert. Demgegenliber kann OD3 erst nach Temperungen bei 750 "C ausgeheilt werden, wiihrend OD4 noch bei Temperungen bei 850 "C stabil ist. Daraus wird geschluDfolgert, daD OD4 den neuen Donatoren (ND) entspricht. Das bedeutet, daD neue Donatoren nicht nur bei Temperungen gebildet werden, sondern auch durch Langzeit-Temperungen unterhalb von 500 "C (Tl, Bereich (iii)) entstehen kiinnen.

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Section: (2)supporting

confidence: 81%

Section: Od1 and Od2 Us T H R D Donorsmentioning

confidence: 99%

Section: Od1 and Od2 Us T H R D Donorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Formation of new donors in Cz-grown silicon at temperatures below 500°C

Reichel

Reiche²,

Zuber

1990

phys. stat. sol. (a)

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A Variety of Oxygen-Induced Recombination Centres in 450 to 600 °C Heat-Treated Silicon

Glinchuk

Litovchenko

Ptitsin

1986

phys. stat. sol. (a)

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Recombination centres for excess carriers containing from four to seven oxygen atoms (besides the known ones containing eight oxygen atoms) are effectively formed in 450 to 600 °C heat‐treated oxygen‐rich n‐type silicon. An analysis of the formation kinetics of the species found in dependence on the oxygen content permits to find the solubility of the recombination‐efficient oxygen‐containing centres and the rates of their formation and dissociation. Some unknown nuclei in the starting material (they govern the reaction constants for the appearance and annihilation of the species studied) are responsible for the dominant formation of one (or another) kind of the oxygen‐containing recombination centres observed.

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Thermal donors and carbonoxygen defects in silicon

Lindström¹,

Weman

Oehrlein

1987

Phys. Stat. Sol. (a)

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Results of annealing experiments with Czochralski (CZ) silicon are reported. Formation and reduction of thermal donors (TDs) is studied as well as of carbonoxygen‐related defects. The experimental methods used are IR‐absorption spectroscopy and resistivity measurements. The experimental results support a formation process of TDs at 450 °C on nuclei preexisting in silicon. Some of these nuclei are stable at high temperatures (or reform during cool‐down) and it is suggested that oxygen atoms aggregate at theese clusters during 450 °C treatment. Three different nuclei are suggested. Carbonoxygen complexes formed at 450 °C are found to contain two oxygen atoms for each carbon atom. They appear to be electrically neutral. From repeated heat‐treatments at 450 °C it is also found that other oxygen‐related defects than TDs and CO‐complexes are developing, such as oxygen precipitates.

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Investigation of short time donor annihilation in silicon

Cited by 19 publications

References 7 publications

Formation of new donors in Cz-grown silicon at temperatures below 500°C

Formation of new donors in Cz-grown silicon at temperatures below 500°C

A Variety of Oxygen-Induced Recombination Centres in 450 to 600 °C Heat-Treated Silicon

Thermal donors and carbonoxygen defects in silicon

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