Thermal donors and carbonoxygen defects in silicon

Lindström, J. L.; Weman, H.; Oehrlein, G. S.

doi:10.1002/pssa.2210990229

Cited by 21 publications

(7 citation statements)

References 12 publications

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“…The corresponding slopes (DOi/DCs) are found to be 2.05 for the CCz-Si sample and 1.55 for the SnCz-Si sample. The first value is in accord with previous reports 3,33 that the loss of carbon and oxygen atom from solution is near the values of two O i for each C s . However, for the case of SnCz-Si sample this ratio is substantially lower indicating that additional reactions channels involving oxygen and carbon atoms are activated due to the presence of Sn.…”

Section: Resultssupporting

confidence: 92%

“…Notably, measurements of the evolution of the carbon and loss from the solution upon annealing at 450 C in carbon contained Cz-Si showed that two O i atoms are removed for each C s atom and a band at 1026 cm À1 has been attributed to a C-O 2 complex. 3,32,33 In an alternative explanation 34,35 the suppression of thermal donors due to the presence of carbon was attributed to the release of silicon self-interstitials (Si I ) which has been postulated as involved in the generation process of TDs. C atoms react strongly with Si I reducing their concentration leading finally to a reduction of the TDs formation.…”

Section: Introductionmentioning

confidence: 99%

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Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

Angeletos

Sgourou

Andrianakis

et al. 2015

Journal of Applied Physics

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Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm À1 well-known bands of C s O i defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice. V

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Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

Angeletos

Sgourou

Andrianakis

et al. 2015

Journal of Applied Physics

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“…Furthermore, in preannealed samples the oxygen reduction starts only after annealing for 5 to 10 h at 650 "C, whereas the annihilation of T D s is finished and the formation of ND's has begun. On the other hand, during this time the interstitial oxygen concentration, too, does not increase which is contrary to short preannealing times [25]. We suppose that the oxygen reduction is suppressed during shorter annealing times at 650 "C by a supersaturation of silicon self-interstitials (Si,).…”

Section: Oxygen Redrrctwnmentioning

confidence: 66%

Formation of new donors in Cz-grown silicon at temperatures below 500°C

Reichel

Reiche²,

Zuber

1990

phys. stat. sol. (a)

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The formation of oxygen-related donors (OD) at temperatures TI < 500 "C are investigated as well as their annihilation or growth by subsequent annealing at Tt > 550 "C. There is a time-dependent variation of the concentration of ODs for annealing at Tl for up to lo00 h, which can be arranged into three consecutive stages: Besides the known (i) increase up to a maximum value and (ii) following reduction, (iii) further annealing causes a level of the donor concentration which does only slightly differ over longer times. Furthermore, samples, preannealed at Tl corresponding to these stages, are subsequently annealed at T'. Here, due to their different annihilation behaviour four different oxygen related donors, i.e. OD1 to OD4, are distinguished, which are formed during annealing at Tl. Donors OD1 and OD2 are interpreted to be the thermal donors already known. On the other hand, OD3 is annihilated first at 750 "C, while OD4 is stable also during annealing at 850 "C. Following this, OD4 is regarded as a new donor (ND). This means, that besides annealing at T2, also extended annealing at temperatures below 500 "C (Ti) results in the formation of ND's. Die Bildung sauerstoffbedingter Donatoren (OD) bei Temperaturen Tl < 500 "C und deren Annihilation oder Wachstum bei nachfolgenden Temperungen bei T ' > 550 "C wird untersucht. Es existiert eine zeitabhangige OD-Konzentration fiir Temperungen Tl bis zu lo00 Stunden. Es kiinnen drei aufeinanderfolgende Bereiche unterschieden werden: Neben dem bereits bekannten (i) Ansteigen bis zu einem Maximum und (ii) nachfolgender Vemngerung (iii) wird bei weiterem Tempern ein Niveau der Donatorkonzentration erreicht, das uber lange Zeiten wenig geiindert wird. Bei Tl vorgetemperte Proben, die diesen Bereichen zugeordnet werden kiinnen, werden nachfolgenden Temperungen bei T2unterworfen. Auf Grund des unterschiedlichen Ausheilverhaltens werden vier verschiedene sauerstoffbedingte Donatoren OD1 bis OD4 unterschieden, die bereits bei Tl gebildet wurden. OD1 and OD2 werden als bereits bekannte Thermodonatoren interpretiert. Demgegenliber kann OD3 erst nach Temperungen bei 750 "C ausgeheilt werden, wiihrend OD4 noch bei Temperungen bei 850 "C stabil ist. Daraus wird geschluDfolgert, daD OD4 den neuen Donatoren (ND) entspricht. Das bedeutet, daD neue Donatoren nicht nur bei Temperungen gebildet werden, sondern auch durch Langzeit-Temperungen unterhalb von 500 "C (Tl, Bereich (iii)) entstehen kiinnen.

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“…It is therefore reasonable to expect that oxygen in a TD should have vibrational absorption bands in the spectral range of 800-1250 cm IR absorption bands at 1006 and 1013 cm ' have previously been reported [11, 13,14]. One suggestion presented is that a band observed at 1012 cm ' is related to a nuclei for thermal donors [14]. Another interpretation is that a band at 1013 cm ' is an overtone of an IR band at 514 cm ' related to interstitial oxygen [11].…”

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confidence: 97%

Clustering of oxygen atoms in silicon at 450 °C: A new approach to thermal donor formation

Lindström

Hallberg

1994

Phys. Rev. Lett.

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Clustering of oxygen atoms in silicon at 450 C has been correlated with a group of infrared vibrational absorption bands observable at room temperature. The bands are related to the formation of thermal donors and show a good correlation with results from diAerent experimental techniques. It is suggested that three categories of thermal donors are developing corresponding to absorption bands at about 975, 988, 1000, 1006, and 1012 cm PACS numbers: 61.72.Ji, 61.72.Cc, 78.50. -Oxygen is an important impurity in silicon materials used for integrated circuits due to its beneficial effects such as wafer hardening and intrinsic gettering. However, in a very large temperature range (up to 1200'C) the solution of interstitial oxygen in silicon remains highly supersaturated. At temperatures where oxygen becomes mobile ()350'C) aggregation of oxygen atoms starts, which can cause harmful effects in circuit performance. Future processing (high complexity, low temperature processing) requires a deeper knowledge about the nature of these defects. The clustering of oxygen atoms in Czochralski grown (Cz) silicon has been widely studied [1]. At high temperature treatments (800-100'C) different quartz precipitates have been observed to form and at lower temperatures smaller clusters are developing, giving rise to the new donors (ND) (550-750'C), the thermal donors (TD), and the shallow thermal donors (STD) (350-500 C). The TDs in silicon. are probably among the most studied defects in semiconductors [2,3]. The experimental studies have included techniques such as resistivity measurements, infrared absorption spectroscopy, photoluminescence, electron paramagnetic resonance, electron nuclear double resonance, Hall effect, deep level transient spectroscopy, and photothermal ionization spectroscopy. The structure of these defects is suggested to be a core to which oxygen atoms aggregate to form a series of closely related donor structures. Several core models have been presented [1-3] but so far no model has been experimentally verified. Very detailed information about these defects comes from electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy at low temperatures. IR spectroscopy results show many absorption bands related to electronic transitions which have been systematically studied and ordered into an effective masslike series corresponding to at least nine different double donors, TDI-TD9 [1]. Several models have been presented on the growth kinetics of TDs [1-3] trying to tie the clustering of oxygen to the TD formation kinetics. Most models use a serial formation process instead of parallel processes [41.Oxygen in silicon is known to give rise to several vibrational IR absorption bands both as an interstitial atom and in combination with vacancies [5] or with impurity atoms [6). Also the formation of oxygen precipitates in the range 800-1000'C is known to give rise to different IR absorption bands [7,8]. However, no oxygen related vibrational absorption band has so far been correlated with the formation of T...

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Thermal donors and carbonoxygen defects in silicon

Cited by 21 publications

References 12 publications

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

Formation of new donors in Cz-grown silicon at temperatures below 500°C

Clustering of oxygen atoms in silicon at 450 °C: A new approach to thermal donor formation

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