Investigation of MIS structures with Al2O3 insulation layers obtained by d.c. reactive sputtering

Kirov, K.; Atanasova, E. D.; Ivanov, N. P.

doi:10.1016/0040-6090(77)90388-1

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Index Of Refraction1

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1978

1999

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“…These values are typical for dense amorphous layers produced by different methods as e.g. rf sputtering of Al,O, [6, 141, dc reactive sputtering [15], and pyrolytic reactions [7 to 91. When the oxygen content is great (POJPAr 2 3)) n drops to 1.45 to 1.40.…”

Section: Index Of Refractionmentioning

confidence: 99%

Investigation of Al2O3 layers obtained by DC planar-magnetron sputtering

Kirov

Atanasova

Ivanov

1978

Phys. Stat. Sol. (a)

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A planar‐magnetron system is used for dc reactive sputtering of Al in O2 + Ar atmosphere. It is shown that the electrophysical properties of so produced alumina (Al2O3) layers depend on the gas ratio mainly. By studying the index of refraction, the dielectric constant, the resistivity, the breakdown field, and the C–V characteristics it is found that the most stoichiometric layers are obtained at a partial pressure ratio, Po2/ArP, in the range of 0.45 to 0.65. The MAS structures show good interface properties only after annealing in N2 at 1000°C and in H2 at 450°C.

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Section: Index Of Refractionmentioning

confidence: 99%