Effects of gas ring position and mesh introduction on film quality and thickness uniformity

Hong, Seungbum; Kim, Eunah; Jiang, Zhong Tao; Bae, Byeong‐Soo; No, Kwangsoo; Lim, Se-won; Woo, Sang Uk; Koh, Youngil

doi:10.1016/s0921-5107(96)01913-7

Cited by 10 publications

(2 citation statements)

References 7 publications

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“…We used two gas rings and stainless steel mesh to improve film uniformit 8) . The target was fixed to a Cu electrode with a clamp, and there was a circular magnet above the target to induce magnetic field.…”

Section: Apparatusmentioning

confidence: 99%

High transmittance attenuated phase shifting mask of chromium aluminum oxynitride

Choi

Kim

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

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In this study, high -transmittance attenuated Phase Shift Masks(HT -Att-PSMs) have been investigated to satisfy the requirements of 20±5% transmittance and 180° phase shift at the exposure wavelength of 193 nm for ArF laser (248nm for KrF laser) and less than 40% transmittance at the inspection wavelength of 248 nm(365 nm for KrF laser).Chromium aluminum oxynitride has been studied as a new candidate material for HT -Att-PSM. At first, optimum conditions of composition and thickness were shown by n(refractive index)-k(extinction coefficient)-d(thickness) charts developed to simulate the optimum range of optical constant for HT -Att-PSM using the matrix method. Chromium aluminum oxynitride films were deposited by changing of variables such as target composition, gas flow rate, deposition power and deposition pressure to find optimum conditions to meet the simulated range. This study examined effects of processing variables on the optical properties of chromium aluminum oxynitride films and e stablished optimum conditions of chromium aluminum oxynitride films for HT -Att-PSM.

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Section: Apparatusmentioning

confidence: 99%

High transmittance attenuated phase shifting mask of chromium aluminum oxynitride

Choi

Kim

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

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“…However, the preparation of TiO 2 thin films by sputtering technique is almost the problem of low deposition rate due to the formation of oxide on the target (Ti) surface, which well known as "target poisoning". Several researchers developed the sputtering process for enhance the deposition rate and quality of TiO 2 thin films such as using gas ring position and mesh grid [6] and using two sputtering sources with separate a mesh grid [7]. In this work, the effects of mesh grid cover installed on the single sputtering source and argon gas flow rates on the deposition rate and the quality of TiO 2 thin films such as optical, structural and hydrophilic activity were investigated.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Deposition Rate of Photo-Induce Hydrophilic TiO<sub>2</sub> Thin Films Prepared by Pulsed DC Reactive Magnetron Sputtering

Aiempanakit

Phongphao

Preechanchueong

et al. 2013

AMR

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Based on recent discovery of high-rate reactive magnetron sputtering, which was a key requirement for production of coating industry, this study focused on enhanced deposition rate of TiO2 films for photo-induce hydrophilic applications. The TiO2 thin films were reactively sputtered, which a pulsed DC source, from high-purity (99.995%) titanium (Ti) target on glass and silicon (100) and wafer substrates. During the deposition, a mesh grid cover was installed on the sputtering source with varying argon gas flow rates. Properties of the TiO2 films were compared between deposition with and without a mesh grid cover. The microstructure of the TiO2 films was studies by grazing-incidence X-ray diffraction (GIXRD) and field-emission scanning electron microscope (FE-SEM). The optical properties were determined by UV-Vis spectrophotometer. The contact angle measurement was used to determine the hydrophilicity of the films after exposing to UV light. For using the mesh grid during film deposition, it was found that the deposition rate of the TiO2 films was increased in oxide mode with a small grain size. In this case, the TiO2 films showed high transparent and good photo-induced hydrophilic properties.

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Local structures and electronic structures of HfON thin films: x‐ray absorption fine structure study and first‐principles calculations

Kim

2006

X-Ray Spectrometry

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The local structures of HfON thin films were analyzed using an extended x‐ray absorption fine structure (EXAFS) study of the Hf L3‐edge and first‐principles calculations. Depending on their composition and atomic configurations, Hf4O5N2 [coordination number (CN): 6.25], Hf4O2N4 (CN: 5.5) and Hf4O2N4 (CN: 5.0) were suggested as the local structures of HfON thin films. Using the suggested local structures, the electronic structures of HfON thin films were calculated. The variations of the valence band were analyzed with the film composition and compared with the experimental valence band. The optical band gaps of HfON thin films were compared with the calculated values. The transition rate for the optical absorption was suggested as another reason for the band gap difference. Copyright © 2006 John Wiley & Sons, Ltd.

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Effects of gas ring position and mesh introduction on film quality and thickness uniformity

Cited by 10 publications

References 7 publications

High transmittance attenuated phase shifting mask of chromium aluminum oxynitride

High transmittance attenuated phase shifting mask of chromium aluminum oxynitride

Enhanced Deposition Rate of Photo-Induce Hydrophilic TiO<sub>2</sub> Thin Films Prepared by Pulsed DC Reactive Magnetron Sputtering

Local structures and electronic structures of HfON thin films: x‐ray absorption fine structure study and first‐principles calculations

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