Articles you may be interested inInfluence of Au nanoparticles on the photoluminescent and electrical properties of Bi3.6Eu0.4Ti3O12 ferroelectric thin films J. Appl. Phys. 116, 034101 (2014); 10.1063/1.4887810 Ferroelectric and ferromagnetic properties of epitaxial BiFeO3-BiMnO3 films on ion-beam-assisted deposited TiN buffered flexible Hastelloy Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique
α‐normalSiC
films were grown in a horizontal reactor using a flow system in either H2 or argon carrier gas. Substrates used were silicon single crystals, hexagonal
normalSiC
platelets, and sapphire. Films were grown by three essentially different methods; namely, (i) reaction of pyrocarbon (from
CH4
or
C2H2
) with substrate silicon atoms, (ii) reaction of
SiCl4
and
CH4
, and (iii) pyrolysis of
false(CH3)2SiCl2
. The quality and the growth mechanisms of films grown under different reaction conditions are discussed. It is inferred from the results of the pyrocarbon reaction that silicon diffuses through the initially formed
normalSiC
film and reacts with surface carbon atoms. Infrared absorption spectra indicate that the growth rate of thin films of
β‐normalSiC
depends on the orientation of the silicon substrates. Electron diffraction patterns indicate ordered films of
β‐normalSiC
.
Single crystals of ferroelectric Bi4Ti3O12 are known to possess novel optical properties with potential use in optical memory or display applications. There is interest in duplicating these properties in thin films. Suitability of reactive and rf sputtering for preparation of stoichiometric films has been investigated. Films from stoichiometric targets were Bi deficient. Using Bi-rich targets stoichiometric films were obtained by depositing at substrate temperatures (typically in the range of 500 °–700 °C) high enough to prevent inclusion of the more volatile bismuth oxide in excess of the Bi4Ti3O12 composition. Good quality epitaxial growth has been achieved on MgO and epitaxial Pt substrates.
The charge behavior of dc reactively sputtered SiO2 films has been studied. We observed insulator charge of both polarities in the SiO2–Si structure, depending on the sputtering conditions. When the SiO2 layer is deposited under high-cathode-voltage low-gas-pressure conditions, the insulator charge is positive; when the SiO2 layer is deposited under low-cathode-voltage high-gas-pressure conditions, the insulator charge is negative. This, we propose, is attributed to the adsorption of oxygen ions, which are generated in oxygen glow discharges, on the silicon surface, and the deposited SiO2 layer during the oxide deposition. Published work on ion yield under varying plasma conditions can be cited to support this model. These ions appear to exist throughout the bulk of the oxide, but are predominantly found at or near the SiO2–Si interface. After annealing at 800°C in dry oxygen, only ions at or near the interface are observed. Results of bias and temperature stresses on the films deposited under different conditions are also described.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.