Preparation and Epitaxy of Sputtered Films of Ferroelectric Bi4Ti3O12

Takei, W. J.; Formigoni, N. P.; Francombe, M. H.

doi:10.1116/1.1492894

Cited by 67 publications

(8 citation statements)

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“…The measured remanent polarization ( P r ) was 4.4 C/cm 2 and the coercive field (E c ) was 84 kV/cm. The measured polarization was slightly higher than the c-axis polarization of 4 C/cm 2 observed in bulk Bi 4 Ti 3 O 12 single crystals 6 and epitaxial films, 23 but it was small compared with the a-axis polarization of 50 C/cm 2 ; however the value of the coercive field was found to be larger.…”

Section: Ferroelectric Propertiesmentioning

confidence: 70%

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Joshi

Desu

1996

Journal of Applied Physics

131

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Structural and optical properties of laser deposited ferroelectric (Sr0.2Ba0.8)TiO3 thin films J. Appl. Phys. 79, 7965 (1996); 10.1063/1.362346Structural and dielectric studies of Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric solid solutions around the morphotropic boundary J. Appl. Phys. 79, 4291 (1996) Polycrystalline Bi 4 Ti 3 O 12 thin films having layered perovskite structure were fabricated by metalorganic solution deposition technique on both Pt-coated Si and bare Si substrates at a temperature as low as 500°C. The effects of post-deposition rapid thermal annealing on the structural and electrical properties were analyzed. The electrical measurements were conducted on metal-ferroelectric-metal capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 184 and 0.018 and the remanent polarization and the coercive field were 4.4 C/cm 2 and 84 kV/cm, respectively. The films exhibited high resistivity in the range 10 8 -10 12 ⍀ cm for films annealed at temperatures of 500-700°C for 10 s. The I -V characteristics were found to be Ohmic at low fields and space-charge-limited at high fields. A V 3/2 dependence of the current was observed in the space-charge region. This could be explained by assuming the mobility to be field dependent since in thin films the electric fields are invariably high even at low applied voltages.

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Section: Ferroelectric Propertiesmentioning

confidence: 70%

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Joshi

Desu

1996

Journal of Applied Physics

131

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“…1,2, In the early stages, BLSFs were investigated for use in potential optoelectronic and piezoelectronic devices. [30][31][32][33][34] However, the number of these research materials dramatically increased after the fatigue-free nature of SBT ferroelectric capacitors coupled with Pt electrodes was discovered in 1995. 35 The high-fatigue endurance of these capacitors increased the write/readout cycles of ferroelectric random access memories ͑FeRAMs͒ over 10 10 .…”

Section: Introductionmentioning

confidence: 99%

Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

Watanabe

Funakubo

2006

Journal of Applied Physics

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This article describes the current progress in thin bismuth layer-structured ferroelectric films ͑BLSFs͒ including SrBi 2 Ta 2 O 9 and ͑Bi, La͒ 4 Ti 3 O 12 , particularly those developed in the last ten years. BLSF thin films can be applied to ferroelectric random access memories because of their durable fatigue-free properties and lead-free composition. We will briefly introduce epitaxial thin films grown on a variety of substrates. Because of the difficulty in growing single crystals of sufficient size to characterize the ferroelectric behavior in specific crystal growth directions, we will characterize epitaxially grown thin films to obtain basic information about the anisotropic switching behavior, which is important for evaluating the performance of emerging materials. We will then discuss the fiber-textured growth on the ͑111͒Pt-covered Si substrates of SrBi 2 Ta 2 O 9 and Bi 4 Ti 3 O 12 thin films. Because we expect that the spread crystal orientation will affect the bit-to-bit errors, we believe that the fiber-textured growth and the characterization technique for the deposited film orientation are interesting from a practical standpoint. Another specific challenge of thin film growth is the growth of a-axis-͑polar axis͒-oriented films. a-/b-axis-oriented films are characterized both crystallographically and by electric hysteresis loop. The hysteresis performance was in accordance with the volume fraction of the a / b domains; however, no evidence for 90°switching of the b domain by an external electric field was obtained. The control of film orientation also allows systematic studies on the effects of a structural modification and relation between spontaneous polarization and Curie temperature, examples of which are given in this paper. After a short description of the piezoelectric properties, we will conclude with a summary and the future prospects of BLSF thin films for research and applications.

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“…A number of methods have been successfully developed to prepare Bi 4 Ti 3 O 12 thin films, including sol-gel processing [7], metalorganic chemical vapor deposition (MOCVD) [8], pulsed laser deposition (PLD) [9], and sputtering [10]. The advantages of traditional RF magnetron sputtering technique are more uniformity and large area for films, which is adopted in this study to prepare the Bi 4 Ti 3 O 12 thin films.…”

Section: Introductionmentioning

confidence: 99%

Improved characteristics of Bi4Ti3O12 thin film on ITO glass by using excess Bi2O3-added Bi4Ti3O12 ceramic as source target

Chia

Chen

Yang

et al. 2008

Journal of Physics and Chemistry of Solids

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Preparation and Epitaxy of Sputtered Films of Ferroelectric Bi4Ti3O12

Cited by 67 publications

References 0 publications

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

Improved characteristics of Bi4Ti3O12 thin film on ITO glass by using excess Bi2O3-added Bi4Ti3O12 ceramic as source target

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