Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Abstract

Structural and optical properties of laser deposited ferroelectric (Sr0.2Ba0.8)TiO3 thin films J. Appl. Phys. 79, 7965 (1996); 10.1063/1.362346Structural and dielectric studies of Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric solid solutions around the morphotropic boundary J. Appl. Phys. 79, 4291 (1996) Polycrystalline Bi 4 Ti 3 O 12 thin films having layered perovskite structure were fabricated by metalorganic solution deposition technique on both Pt-coated Si and bare Si substrates at a temperature as low as 500°C. The effects of post-deposition rapid thermal annealing on the structural and electrical properties were analyzed. The electrical measurements were conducted on metal-ferroelectric-metal capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 184 and 0.018 and the remanent polarization and the coercive field were 4.4 C/cm 2 and 84 kV/cm, respectively. The films exhibited high resistivity in the range 10 8 -10 12 ⍀ cm for films annealed at temperatures of 500-700°C for 10 s. The I -V characteristics were found to be Ohmic at low fields and space-charge-limited at high fields. A V 3/2 dependence of the current was observed in the space-charge region. This could be explained by assuming the mobility to be field dependent since in thin films the electric fields are invariably high even at low applied voltages.

Effect of Boron Addition on the Dielectric Properties of Giant Dielectric CaCu3Ti4O12

“…However, at high frequencies (near 1 MHz), the DF for all the compositions shows a sharp rising trend as observed by other workers [13]. The sharp rise in DF is probably a resonance effect [19] arising from the stray inductance of the contacts and leads. The capacitance of the samples being of the order of 10 nF and a stray inductance of the order of a few micro-Henry [20] can induce L-C resonance in the MHz frequency range.…”

High electric field conduction in low-alkali boroaluminosilicate glass

“…where l 0 is the field independent mobility at the low field, E 0 the critical field beyond which the field dependence of the mobility is dominant [12]. Then the voltage dependence of current density will be 1.5 and the thickness dependence of current density will be 2.5.…”

“…It is important to understand the electrical conduction mechanism under high electric field in the glass system since it is closely linked to breakdown strength. Leakage currents in ceramic and polymer insulators have been understood with several conduction mechanisms identified including Schottky emission, Fowler-Nordheim tunneling, Poole-Frenkel emission, space-charge-limited current, and hopping conduction [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Conduction mechanisms for glasses have also been studied with the primary focus on the electronic hopping conduction in glasses containing transition metal ions or ionic conduction in glasses with alkali ions [20][21][22].…”

Structural and electrical properties of crystalline (1−x)Ta2O5–xAl2O3 thin films fabricated by metalorganic solution deposition technique

“…This behavior was found to be extrinsic in nature as similar behavior was observed at around the same frequency for thin films of other dielectric materials. 16 At frequencies of the order of a few MHz, the stray inductance L of the contacts and wires and/or the presence of a finite resistance in series with the films, which may arise due to intrinsic or extrinsic sources, may cause such behavior. 17 Figure 4 shows the dependence of the film capacitance and the loss factor on the measurement temperature in the range 25-125°C.…”