Investigation of Ferroelectric Domain Switching of Pb(Zr0.35Ti0.65)O3 Thin Films by Electric Force Microscopy

Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

“…Thin films of Ti rich PZT also known as PZT(35/65) having the ability to store large amount of charges in small region in lower coercive field show higher remnant polarization, which makes it an attractive material for the gate in FeFET. [6][7][8][9][10][11] However, it is difficult to get the good interface between the PZT and the Si substrate due to the fact that most ferroelectric materials easily react with Si to form a non-ferroelectric interfacial layer even at low annealing temperature (<500 C) thus degrading the device integrity. 12 Further, the diffusion of Pb from the PZT to the channel layer of FeFET is of great concern in VLSI devices.…”